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MIE-514A4 PDF预览

MIE-514A4

更新时间: 2024-02-27 00:11:50
品牌 Logo 应用领域
东贝光电 - UOT 二极管高功率电源
页数 文件大小 规格书
2页 36K
描述
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

MIE-514A4 数据手册

 浏览型号MIE-514A4的Datasheet PDF文件第2页 
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE  
INFRARED EMITTING DIODE  
MIE-514A4  
Description  
Package Dimensions  
The MIE-514A4 is an infrared emitting diodes in  
GaAs technology with AlGaAs window coating  
encapsulated in water clear package.  
f 5.05  
Unit: mm (inches)  
(.200)  
5.47  
(.215)  
7.62  
(.300)  
5.90  
(.230)  
1.00  
(.040)  
SEE NOTE 2  
Features  
FLAT DENOTES CATHODE  
l High radiant power and high radiantintensity  
23.40 MIN  
(.920)  
l Standard T-1 3/4 ( f 5mm) package  
l Peak wavelength l p = 940 nm  
l Good spectral matching to si-photodetector  
l Radiant angle : 16°  
0.50 TYP.  
(.020)  
1.00MIN.  
(.040)  
2.54NOM.  
(.100)  
SEE NOTE 3  
C
A
Notes :  
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.  
2. Protruded resin under flange is 1.5 mm (.059") max.  
3. Lead spacing is measured where the leads emerge from the package.  
Absolute Maximum Ratings  
o
o
@ T =25 C  
A
Parameter  
Maximum Rating  
Unit  
mW  
A
Power Dissipation  
120  
1
Peak Forward Current(300pps,10ms pulse)  
Continuos Forward Current  
Reverse Voltage  
100  
5
mA  
V
-55oC to +100oC  
-55oC to +100oC  
260oC for 5 seconds  
Operating Temperature Range  
Storage Temperature Range  
Lead Soldering Temperature  
Unity Opto Technology Co., Ltd.  
11/17/2000  

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