Datasheet > MIE-404L3

MIE-404L3

更新时间： 2024-01-29 11:05:49

品牌	Logo	应用领域
东贝光电 - UOT		二极管高功率电源
页数	文件大小	规格书
2页	37K
描述
GaAlAs HIGH POWER T0-46 PACKAGE INFRARED EMITTING DIODE

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MIE-404L3 数据手册

GaAlAs HIGH POWER T0-46 PACKAGE

INFRARED EMITTING DIODE

MIE-404L3

Description

Package Dimensions

The MIE-404L3 is an infrared emitting diode with

GaAlAs / GaAlAs die technology molded in a water

clear plastic package.

Unit : mm (inches )

ψ4.75

(.187)

45°

CATHODE

INDICATOR

5.60

(.221)

.70

(.028)

5.46

(.215)

.25 MAX

(.059 )

25.00 MIN

(.984)

.50 TYP.

(.020)

Features

l Standard TO-46 package

l Peak wavelength l _p= 880 nm

l Good spectral matching to si-photodetector

1.00 MIN

(.040)

2.54

(.100)

Radiant angle : 25°

Notes :

1. Tolerance is ± .010" unless otherwise noted.

2. Protruded resin under flange is .031"max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Maximum Rating

Unit

Power Dissipation

120

Peak Forward Current(300pps,10ms pulse)

Continuos Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

02/04/2002

中文翻译

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