MGS8xx / MGS9xx Series
GaAs Schottky Diodes
Rev. V1
Features
14 Different Configurations
Beam Lead, Flip Chip, or Packaged Devices
Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MGS series of GaAs Schottky diodes are
designed for optimum performance in millimeter
wave components operating to 60 GHz.
Beam Lead
Electrical Characteristics, TA = +25°C
VF
mV
Δ VF
mV
VBR
V
CJ
pF
Δ CJ
pF
RS
Model
Configuration
Outline
Min.
Max.
Max.
Min.
Max.
Max.
Max.
MGS901
MGS902
MGS903
MGS904
MGS905
MGS906
MGS907
Single Junction
650
650
750
750
—
20
20
20
20
40
40
40
40
40
60
60
60
—
5
0.06
0.10
0.06
0.06
0.06
0.04
0.04
0.06
0.08
0.04
0.10
0.10
0.10
0.03
—
7
GB110
GB210
GB310
B85
Anti-parallel Pair
5
—
7
Series Tee
650
750
5
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.03
0.03
0.03
—
7
4 Junction Ring-Quad
4 Junction Bridge-Quad
4 Junction Series-Tee
8 Junction Ring-Quad
650
750
5
7
650
750
5
7
B86
1300
1300
1300
1300
1300
1800
1800
1800
2500
1500
1500
1500
1500
1500
2100
2100
2100
2900
IF = 1 mA
10
10
10
10
10
15
15
15
20
14
14
12
10
14
21
21
21
28
B91
B85
MGS907A 8 Junction Ring-Quad
MGS907B 8 Junction Ring-Quad
B85
B85
MGS908
MGS909
MGS910
MGS911
MGS912
8 Junction Quad
6 Junction Series-Tee
12 Junction Ring-Quad
12 Junction Bridge-Quad
Four Junction
B86
B90
B87
B88
B89
Test Conditions
IR = 10 µA VR = 0 V, 1 MHz IF = 5 mA
Flip Chip
Electrical Characteristics, TA = +25°C
VF
mV
Δ VF
mV
VBR
V
CJ
pF
Δ CJ
pF
RS
Model
Configuration
Outline
Min.
Max.
Max.
Min.
Max.
Max.
Max.
MGS801
Single Junction
650
650
650
650
650
750
750
750
750
750
—
—
20
20
20
5
5
5
5
5
0.05
0.075
0.10
0.15
0.06
—
—
7
5
7
5
7
GC110
GC110
GC210
GC210
GC310
MGS801A Single Junction
MGS802 Anti-parallel Pair
MGS802A Anti-parallel Pair
—
—
MGS803
Series Tee
0.02
Test Conditions
IF = 1 mA
IR = 10 µA VR = 0 V, 1 MHz IF = 5 mA
1
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