Datasheet > MGSB20800

MGSB20800

更新时间： 2024-11-22 15:19:03

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	252K
描述
TO-263

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中文翻译

获取价格

数据手册

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MGSB20800 数据手册

RoHS

MGSB20800

COMPLIANT

General Purpose Rectifier Diodes

Features

● High surge forward current capability

● High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

● Guard ring for enhanced ruggedness and long term reliability

● Solder dip 260 °C max. 10 s, per JESD 22-B106

Typical Application

● Input rectification

Mechanical Data

●

ackage: TO-263

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

● Terminals: Tin plated leads, solderable per J-STD-

002 and JESD22-B102

● Polarity: As marked

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

MGSB20800

800

PARAMETER

SYMBOL

UNIT

Device marking code

Repetitive Peak Reverse Voltage per diode

RRM

Average Rectified Output Current

@60Hz half sine-wave, R-load, Tc(FIG.1)per diode

Surge(Non-repetitive)Forward Current

@60Hz half sine-wave, 1 cycle, Tj=25℃ per diode

IFSM

I²t

300

Current Squared Time

@1ms≤t≤8.3ms Tj=25℃，rating of per diode

A²s

℃

373

Storage Temperature

stg

-55 ~ +150

Junction Temperature

（T =25℃Unless otherwise specified）

■Electrical Characteristics

MGSB20800

PARAMETER

SYMBOL

UNIT TEST CONDITIONS

=20.0A

Maximum instantaneous forward voltage

drop per diode

Tj=25℃

1.1

RM RRM

Tj=25℃

Maximum DC reverse current at

rated DC blocking voltage per diode

RRM

RM RRM

100

Tj=125℃

Measured at 1MHz

and Applied

Reverse Voltage of

4.0 V.D.C

Typical junction capacitance per diode

1 / 4

S-B3177

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,18-Sep-23

12 3 4

中文翻译

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