Datasheet > MGSF1N02EL

MGSF1N02EL

更新时间： 2022-11-25 15:02:57

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
5页	120K
描述
N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET

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MGSF1N02EL 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–CHANNEL

LOGIC LEVEL

ENHANCEMENT–MODE

TMOS MOSFET

Part of the GreenLine Portfolio of devices with energy–

conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s

High Cell Density, HDTMOS process. Low r

assures

DS(on)

minimal power loss and conserves energy, making this device

ideal for use in space sensitive power management circuitry.

Typical applications are dc–dc converters and power manage-

ment in portable and battery–powered products such as

computers, printers, PCMCIA cards, cellular and cordless

telephones.

3 DRAIN

CASE 318–08, Style 21

SOT–23 (TO–236AB)

•

Low r Provides Higher Efficiency and Extends Battery

DS(on)

Life

GATE

•

Miniature SOT–23 Surface Mount Package Saves Board Space

2 SOURCE

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Symbol

Value

Unit

Vdc

DSS

Gate–to–Source Voltage — Continuous

± 8.0

Drain Current — Continuous @ T = 25°C

750

2000

Drain Current — Pulsed Drain Current (t ≤ 10 µs)

Total Power Dissipation @ T = 25°C

400

– 55 to 150

300

°C

Operating and Storage Temperature Range

Thermal Resistance — Junction–to–Ambient

T , T

stg

°C/W

°C

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

3000

MGSF1N02ELT1

MGSF1N02ELT3

7″

8mm embossed tape

13″

10,000

GreenLine is a trademark of Motorola, Inc.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_c.a₁₉ll₉–₈Signal Transistors, FETs and Diodes Device Data

12 3 4 5

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型号	品牌	描述	获取价格	数据表
MGSF1N02ELT1	MOTOROLA	N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET	获取价格
MGSF1N02ELT1G	ONSEMI	750mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, LEAD FREE, CASE 318-08, 3 PIN	获取价格
MGSF1N02ELT3	MOTOROLA	N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET	获取价格
MGSF1N02ELT3	ONSEMI	750mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN	获取价格
MGSF1N02LT1	MOTOROLA	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET	获取价格
MGSF1N02LT1	ONSEMI	Power MOSFET 750 mAmps, 20 Volts	获取价格