MGFS39E2527A-01

更新时间： 2024-01-18 03:39:48

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
20页	338K
描述
2.5-2.7GHz HBT Integrated Circuit

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MGFS39E2527A-01 数据手册

MITSUBISHI SEMICONDUCTOR

MGFS39E2527A-01

Specifications are subject to change without notice.

2.5-2.7GHz HBT Integrated Circuit

Outline Drawing

DESCRIPTION

6.0

MGFS39E2527A is a 4-stage amplifier designed

0.9

for WiMAX CPE.

39E2527A

(Lot. No)

JAPAN

FEATURES

• InGaP HBT Device

• 6V Operation

6.0

• 30dBm Linear Output Power (64QAM, EVM=2.5%)

• 40dB Linear Gain

• Integrated Output Power Detector

• Integrated 1-bit Step Attenuator

• Surface Mount Package

• RoHS Compliant Package

APPLICATION

IEEE802.16-2004

DIM in mm

Top view

FUNCTIONAL BLOCK DIAGRAM

Vc1

Vc2 Vc3,Vcb3,4

Vc4

Vcont

RF IN

External

Output

Matching

Circuits

RF OUT

Vdet

Vcb1

Vcb2

Bias Circuit

Vref1,2

Vref3,4

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always

the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of

substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.

MITSUBISHI ELECTRIC CORP.

Rev. 1.0

Sep. 30-2009

(1/20)

12 3 4 5 6 7...20

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