生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 10 V | 最大漏极电流 (Abs) (ID): | 22 A |
最大漏极电流 (ID): | 6.5 A | FET 技术: | JUNCTION |
最高频带: | S BAND | JESD-30 代码: | R-CDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 最高工作温度: | 175 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 88 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFS45V2325A_04 | MITSUBISHI |
获取价格 |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET | |
MGFS45V2325A_11 | MITSUBISHI |
获取价格 |
2.3-2.5 GHz BAND / 32W | |
MGFS45V2325A-01 | MITSUBISHI |
获取价格 |
Transistor | |
MGFS45V2325A-51 | MITSUBISHI |
获取价格 |
Transistor | |
MGFS45V2527 | MITSUBISHI |
获取价格 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET | |
MGFS45V2527-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction | |
MGFS45V2527A | MITSUBISHI |
获取价格 |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET | |
MGFS45V2527A_11 | MITSUBISHI |
获取价格 |
2.7-3.5 GHz BAND / 30W | |
MGFS45V2527A-01 | MITSUBISHI |
获取价格 |
Transistor | |
MGFS45V2527A-51 | MITSUBISHI |
获取价格 |
Transistor |