MGFS48B2122

更新时间： 2024-10-01 21:54:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	229K
描述
2.11 - 2.17 GHz BAND 60W GaAs FET

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MGFS48B2122 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFS48B2122

2.11 - 2.17 GHz BAND 60W GaAs FET

OUTLINE

The MGFS48B2122 is a 60W push-pull type GaAs Power FET

especially designed for use in 2.11 - 2.17GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees

high reliability.

Push-pull configuration

High output power

Pout = 60W (TYP.) @ f=2.17 GHz

High power gain

GLP = 12 dB (TYP.) @ f=2.17GHz

High power added efficiency

P.A.E. = 48 % (TYP.) @ f=2.17GHz

2.11-2.17GHz band power amplifier for W-CDMA Base Station

VDS = 12 (V)

ID = 2.0 (A)

RG=20 (ohm) for each gate

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them.Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (1)placement of

(Ta=25deg.C)

Symbol

Parameter

Ratings

-20

Unit

VGDO Gate to drain voltage

VGSO Gate to source voltage

PT *1 Total power dissipation

-10

125

Tch

Channel temperature

Storage temperature

175

deg.C

Tstg

-65 / +175

substitutive, auxiliary circuits, (2)use of non-flammable

material or (3)prevention against any malfunction or mishap.

*1 : Tc=25deg.C

(Ta=25deg.C)

Test conditions

Limits

Typ.

Unit

Symbol

Parameter

Min.

Max.

GLP

Pout

Linear power gain

Output power

Pin=22dBm

VDS=12V, ID(RF off)=2.0A

f=2.17GHz

dBm

ID(RF)

P.A.E.

Rth (ch-c)

Drain current

Pin=39dBm

Power added efficiency

Thermal resistance

deg.C/W

Channel to Case

1.2

June-'04

MITSUBISHI

ELECTRIC

中文翻译

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