< L/S band internally matched power GaAs FET >
MGFS45V2527A
2.5 – 2.7 GHz BAND / 32W
Unit : millimeters (inches)
DESCRIPTION
OUTLINE DRAWING
The MGFS45V2527A is an internally impedance-matched
GaAs power FET especially designed for use in 2.5 - 2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
24.0±0.3(0.945±0.012)
1
0.6±0.15
(0.024±0.006)
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=32W (TYP.) @f=2.5 - 2.7GHz
High power gain
2
GLP=12.0dB (TYP.) @f=2.5 - 2.7GHz
High power added efficiency
P.A.E.=45% (TYP.) @f=2.5 - 2.7GHz
Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
3
20.4±0.2(0.803±0.008)
APPLICATION
item 01 : 2.5 - 2.7 GHz band power amplifier
item 51 : 2.5 - 2.7 GHz band digital radio communication
15.8(0.622)
QUALITY
IG
1
2
3
GATE
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=6.5A RG=25ohm
SOURCE(FLANGE)
DRAIN
GF-51
Absolute maximum ratings (Ta=25C)
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Symbol
Parameter
Ratings
Unit
V
Gate to drain
VGDO
breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
V
ID
Drain current
22
-61
A
IGR
IGF
PT *1
Tch
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
mA
mA
W
76
88
175
C
C
Tstg
-65 to +175
*1 : Tc=25C
Electrical characteristics
(Ta=25C)
Symbol
Parameter
Test conditions
Limits
Typ.
-
Unit
Min.
Max.
Gate to source cut-off voltage
VDS=3V,ID=60mA
-
44
11
-
-5
-
V
dBm
dB
A
VGS(off)
P1dB
GLP
Output power at 1dB gain compression VDS=10V,ID(RF off)=6.5A
45
f=2.5 - 2.7GHz
Linear Power Gain
Drain current
12
-
ID
7.5
45
-
P.A.E.
IM3 *2
Power added efficiency
3rd order IM distortion
-
-
%
-42
-45
-
dBc
Rth(ch-c) *3
Thermal resistance
delta Vf method
-
-
1.5
C/W
*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=2.5,2.6,2.7GHz,delta f=5MHz
*3 :Channel-case
Publication Date : Apr., 2011
1