Datasheet > MGFS45V2123A_11

MGFS45V2123A_11

更新时间： 2024-10-02 11:02:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	113K
描述
2.1-2.3 GHz BAND / 32W

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MGFS45V2123A_11 数据手册

< L/S band internally matched power GaAs FET >

MGFS45V2123A

2.1 – 2.3 GHz BAND / 32W

Unit : millimeters (inches)

DESCRIPTION

OUTLINE DRAWING

The MGFS45V2123A is an internally impedance-matched

GaAs power FET especially designed for use in 2.1 – 2.3

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

24.0±0.3(0.945±0.012)

0.6±0.15

(0.024±0.006)

FEATURES

Class A operation

Internally matched to 50(ohm) system

 High output power

P1dB=32W (TYP.) @f=2.1 – 2.3GHz

 High power gain

GLP=12.0dB (TYP.) @f=2.1 – 2.3GHz

 High power added efficiency

P.A.E.=45% (TYP.) @f=2.1 – 2.3GHz

 Low distortion [item -51]

IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L

20.4±0.2(0.803±0.008)

APPLICATION

 item 01 : 2.1 – 2.3 GHz band power amplifier

 item 51 : 2.1 – 2.3 GHz band digital radio communication

15.8(0.622)

QUALITY

 IG

GATE

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=6.5A  RG=25ohm

SOURCE(FLANGE)

DRAIN

GF-51

Absolute maximum ratings (Ta=25C)

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

Symbol

Parameter

Ratings

Unit

Gate to drain

VGDO

breakdown voltage

-15

VGSO Gate to source breakdown voltage

-15

Drain current

IGR

IGF

PT *1

Tch

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-61

100

175

C

Tstg

-65 to +175

*1 : Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Typ.

Unit

Min.

Max.

Gate to source cut-off voltage

VDS=3V,ID=60mA

-5

dBm

VGS(off)

P1dB

Output power at 1dB gain compression VDS=10V,ID(RF off)=6.5A

f=2.1 – 2.3GHz

GLP

Linear Power Gain

Drain current

7.5

P.A.E.

IM3 *2

Rth(ch-c) *3

Power added efficiency

3rd order IM distortion

Thermal resistance

-42

-45

dBc

C/W

delta Vf method

1.5

*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=2.1,2.2,2.3GHz,delta f=5MHz

*3 :Channel-case

Publication Date : Apr., 2011

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与MGFS45V2123A_11相关器件

型号	品牌	获取价格	描述	数据表
MGFS45V2325	MITSUBISHI	获取价格	2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
MGFS45V2325A	MITSUBISHI	获取价格	2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET
MGFS45V2325A_04	MITSUBISHI	获取价格	2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFS45V2325A_11	MITSUBISHI	获取价格	2.3-2.5 GHz BAND / 32W
MGFS45V2325A-01	MITSUBISHI	获取价格	Transistor
MGFS45V2325A-51	MITSUBISHI	获取价格	Transistor
MGFS45V2527	MITSUBISHI	获取价格	2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
MGFS45V2527-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction
MGFS45V2527A	MITSUBISHI	获取价格	2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFS45V2527A_11	MITSUBISHI	获取价格	2.7-3.5 GHz BAND / 30W

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