Datasheet > MGFS44V2735_11

MGFS44V2735_11

更新时间： 2024-01-31 11:17:19

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	130K
描述
2.7-3.5 GHz BAND / 24W

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MGFS44V2735_11 数据手册

< L/S band internally matched power GaAs FET >

MGFS44V2735

2.7 – 3.5 GHz BAND / 24W

unit : mm

DESCRIPTION

OUTLINE

The MGFS44V2735 is an internally impedance-matched

GaAs power FET especially designed for use in 2.7 - 3.5

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

24 +/- 0.3

0.6 +/- 0.15

(1)

FEATURES

Class A operation

R1.2

Internally matched to 50(ohm) system

 High output power

P1dB=24W (TYP.) @f=2.7 - 3.5GHz

 High power gain

(2)

GLP=12.0dB (TYP.) @f=2.7 - 3.5GHz

 High power added efficiency

P.A.E.=36% (TYP.) @f=2.7 - 3.5GHz

 Low distortion [item -51]

(3)

20.4 +/- 0.2

16.7

IM3=-45dBc (TYP.) @Po=33.5dBm S.C.L

APPLICATION

 item 01 : 2.7 - 3.5 GHz band power amplifier

 item 51 : 2.7 - 3.5 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

(1) gate

(2) source(flange)

(3)drain

 VDS=10V  ID=6.4A  RG=25ohm

GF-38

Absolute maximum ratings (Ta=25C)

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

Symbol

VGDO

Parameter

breakdown voltage

Ratings

Unit

Gate to drain

-15

VGSO Gate to source breakdown voltage

-15

Drain current

IGR

IGF

PT *1

Tch

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-60

126

125

175

C

Tstg

*1 : Tc=25C

-65 to +175

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Typ.

Unit

Min.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

IDSS

VDS=3V,ID=6.4A

6.5

Gate to source cut-off voltage

VDS=3V,ID=160mA

-2

-5

VGS(off)

P1dB

GLP

Output power at 1dB gain compression VDS=10V,ID(RF off)=6.4A

dBm

f=2.7 – 3.5GHz

Linear Power Gain

Drain current

6.4

P.A.E.

IM3 *2

Rth(ch-c) *3

Power added efficiency

3rd order IM distortion

Thermal resistance

-42

-45

dBc

C/W

delta Vf method

1.2

*2 :item -51 ,2 tone test,Po=33.5dBm Single Carrier Level ,f=2.7,3.1,3.5GHz,delta f=10MHz

*3 :Channel-case

Publication Date : Apr., 2011

12 3

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与MGFS44V2735_11相关器件

型号	品牌	获取价格	描述	数据表
MGFS44V2735_98	MITSUBISHI	获取价格	2.7-3.5GHz BAND 25W INTERNALLY MATCHD GaAs FET
MGFS45A2527B	MITSUBISHI	获取价格	2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFS45A2527B_11	MITSUBISHI	获取价格	2.5-2.7 GHz BAND / 32W
MGFS45A2527B-01	MITSUBISHI	获取价格	Transistor
MGFS45B2527B	MITSUBISHI	获取价格	2.5-2.7 GHz BAND / 30W
MGFS45V2123	MITSUBISHI	获取价格	2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
MGFS45V2123A	MITSUBISHI	获取价格	2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET
MGFS45V2123A_04	MITSUBISHI	获取价格	2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFS45V2123A_11	MITSUBISHI	获取价格	2.1-2.3 GHz BAND / 32W
MGFS45V2325	MITSUBISHI	获取价格	2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET

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