Datasheet > MGFS45V2123A_04

MGFS45V2123A_04

更新时间： 2024-10-02 03:39:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	237K
描述
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MGFS45V2123A_04 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFS45V2123A

2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFS45V2123A is an internally impedance-matched

GaAs power FET especially designed for use in 2.1 - 2.3

GHz band amplifiers.The hermetically sealed metal-ceramic

package guarantees high reliability.

176.+0'ꢃ&4#9+0)

FEATURES

Class A operation

Internally matched to 50(ohm) system

High output power

P1dB = 32W (TYP.) @ f=2.1 - 2.3 GHz

High power gain

GLP = 12 dB (TYP.) @ f=2.1 - 2.3GHz

High power added efficiency

P.A.E. = 45 % (TYP.) @ f=2.1 - 2.3GHz

Low distortion [item -51]

IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.

APPLICATION

item 01 : 2.1 - 2.3 GHz band power amplifier

item 51 : 2.1 - 2.3 GHz band digital radio communication

QUALITY GRADE

RECOMMENDED BIAS CONDITIONS

VDS = 10 (V)

ID = 6.5 (A)

)(ꢀꢁꢂ

RG=25 (ohm)

< Keep safety first in your circuit designs! >

(Ta=25deg.C)

ABSOLUTE MAXIMUM RATINGS

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them.Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (1)placement of

Symbol

Parameter

Ratings

-15

Unit

VGDO Gate to drain voltage

VGSO Gate to source voltage

-15

Drain current

IGR

IGF

Reverse gate current

Forward gate current

-61

substitutive, auxiliary circuits, (2)use of non-flammable

material or (3)prevention against any malfunction or mishap.

PT *1 Total power dissipation

100

Tch

Channel temperature

Storage temperature

175

deg.C

Tstg

-65 / +175

*1 : Tc=25deg.C

(Ta=25deg.C)

ELECTRICAL CARACTERISTICS

Limits

Typ.

Unit

Symbol

Parameter

Test conditions

Min.

Max.

-5

VGS(off)

P1dB

Saturated drain current

Output power at 1dB gain

compression

VDS = 3V , ID = 60mA

dBm

GLP

Linear power gain

VDS=10V, ID(RF off)=6.5A, f=2.1 - 2.3GHz

7.5

-45

Drain current

P.A.E.

IM3 *2

Rth(ch-c) *3

Power added efficiency

3rd order IM distortion

Thermal resistance

-42

dBc

deg.C/W

delta Vf method

1.5

*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.1,2.2,2.3GHz,dfelta f=5MHz

*3 : Channel-case

June-'04

MITSUBISHI

ELECTRIC

中文翻译

下载PDF

与MGFS45V2123A_04相关器件

型号	品牌	获取价格	描述	数据表
MGFS45V2123A_11	MITSUBISHI	获取价格	2.1-2.3 GHz BAND / 32W
MGFS45V2325	MITSUBISHI	获取价格	2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
MGFS45V2325A	MITSUBISHI	获取价格	2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET
MGFS45V2325A_04	MITSUBISHI	获取价格	2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFS45V2325A_11	MITSUBISHI	获取价格	2.3-2.5 GHz BAND / 32W
MGFS45V2325A-01	MITSUBISHI	获取价格	Transistor
MGFS45V2325A-51	MITSUBISHI	获取价格	Transistor
MGFS45V2527	MITSUBISHI	获取价格	2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
MGFS45V2527-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction
MGFS45V2527A	MITSUBISHI	获取价格	2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET

与MGFS45V2123A_04相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

MGFS45V2123A_04

MGFS45V2123A_04 数据手册

与MGFS45V2123A_04相关器件

与MGFS45V2123A_04相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MGFS45V2123A_04

MGFS45V2123A_04 数据手册

与MGFS45V2123A_04相关器件

与MGFS45V2123A_04相关文章

您还可以找

您在本页遇到什么问题？