品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | / | |
页数 | 文件大小 | 规格书 |
3页 | 103K | |
描述 | ||
Transistor |
生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 25 A | FET 技术: | METAL SEMICONDUCTOR |
最高工作温度: | 175 °C | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 150 W | 子类别: | Other Transistors |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFC45V6472A-51 | MITSUBISHI |
获取价格 |
Transistor | |
MGFC47A4450 | MITSUBISHI |
获取价格 |
4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET | |
MGFC47A5864A | MITSUBISHI |
获取价格 |
Transistor | |
MGFC47A5867 | MITSUBISHI |
获取价格 |
Transistor | |
MGFC47A7785 | MITSUBISHI |
获取价格 |
7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET | |
MGFC47B3436 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor | |
MGFC47B3436B | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction | |
MGFC47B3538B | MITSUBISHI |
获取价格 |
C band Internally Matched Power GaAs FET | |
MGFC47V5864 | MITSUBISHI |
获取价格 |
5.8-6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET | |
MGFC48B5258 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction |