Datasheet > MGFK30V4045_05

MGFK30V4045_05

更新时间： 2024-02-20 16:56:30

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	252K
描述
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET

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MGFK30V4045_05 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFK30V4045

14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFK30V4045 is an internally impedance matched

GaAs power FET especially designed for use in 14.0-14.5

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

OUTLINE D RAW ING

Unit : millimeters

11.0 +/-0.3

FEATURES

Internally impedance matched

Flip-chip mounted

(1 )

0.5 +/-0.15

(2 )

High output power

P1dB = 1.1W(TYP.) @f=14.0-14.5GHz

High linear power gain

2R-0.9

GLP = 8.0dB(TYP.) @f=14.0-14.5GHz

High power added efficiency

P.A.E. 24 TYP.) @f=14.0-14.5GHz

(3 )

6.2+/-0.2

9.2 +/-0.2

APPLICATION

For use in 14.0-14.5GHz band amplifiers

QUALITY GRADE

RECOMMENDED BIAS CONDITIONS

VDS =8 (V)

9.0

ID =350 (mA)

Refer to Bias Procedure

(1 ) G ATE

(2 ) S O U R C E (FL AN G E )

(3 ) D R AIN

(Ta=25deg.C)

ABSOLUTE MAXIMUM RATINGS

GF-11

Symbol

VGDO

VGSO

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

Unit

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them.Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (1)placement of

-15

1000

IGR

Reverse gate current

Forward gate current

Total power dissipation

Channel temperature

Storage temperature

-3

IGF

PT *1

Tch

175

deg.C

Tstg

-65 / +175

substitutive, auxiliary circuits, (2)use of non-flammable

material or (3)prevention against any malfunction or mishap.

*1 : Tc=25deg.C

(Ta=25deg.C)

Test conditions

VDS=3V,VGS=0V

ELECTRICAL CHARACTERISTICS

Limits

Unit

Symbol

Parameter

Min.

Typ. Max.

IDSS

Saturated drain current

800

1000

VGS(off) Gate to source cut-off voltage

VDS=3V,ID=2mA

-2

-5

Transconductance

VDS=3V,ID=350mA

300

Output power at 1dB gain

compression

P1dB

29.5

dBm

GLP

Linear power gain

VDS=10V, ID(RF off)=350mA, f=14.0 - 14.5GHz

Delta Vf method

7.0

8.0

P.A.E.

Power added efficiency

Rth (Ch-C) Thermal resistance *1

*1 : Channel to case

deg.C/W

Jul-'05

MITSUBISHI

ELECTRIC

12 3

中文翻译

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与MGFK30V4045_05相关器件

型号	品牌	获取价格	描述	数据表
MGFK30V4045_11	MITSUBISHI	获取价格	X/Ku band internally matched power GaAs FET
MGFK30V4045-01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
MGFK33M4045	MITSUBISHI	获取价格	Transistor,
MGFK33M4045-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio
MGFK33V4045	MITSUBISHI	获取价格	14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
MGFK33V4045_11	MITSUBISHI	获取价格	X/Ku band internally matched power GaAs FET
MGFK33V4045_97	MITSUBISHI	获取价格	14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
MGFK35V2228	MITSUBISHI	获取价格	12.2-12.8GHz BAND 3W INTERNALLY MATCHED GaAs FET
MGFK35V2228-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio
MGFK35V2228-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio

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