Datasheet > MGFK38A3745_11

MGFK38A3745_11

更新时间： 2024-02-17 10:10:30

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
4页	193K
描述
X/Ku band internally matched power GaAs FET

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MGFK38A3745_11 数据手册

< X/Ku band internally matched power GaAs FET >

MGFK38A3745

13.75 – 14.50 GHz BAND / 6W

DESCRIPTION

The MGFK38A3745 is an internally impedance-matched

GaAs power FET especially designed for use in 13.75 – 14.50

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

FEATURES

Class A operation

Internally matched to 50(ohm) system

 High output power

P1dB=6W (TYP.) @f=13.75 – 14.50GHz

 High linear power gain

GLP=8.0dB (TYP.) @f=13.75 – 14.50GHz

 High power added efficiency

P.A.E.=30% (TYP.) @f=13.75 – 14.50GHz

APPLICATION

 13.75 – 14.50 GHz band power amplifiers

QUALITY GRADE

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=1.5A  RG=100ohm

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

Absolute maximum ratings (Ta=25C)

Symbol

Parameter

Ratings

-15

Unit

Gate to drain

VGDO

breakdown voltage

VGSO Gate to source breakdown voltage

-10

PT *1

Tch

Total power dissipation

Cannel temperature

Storage temperature

37.5

175

C

Tstg

-65 to +175

*1 : Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Typ.

-1.5

Unit

Min.

-1

Max.

Gate to source cut-off voltage

VDS=3V,ID=21mA

-4

dBm

VGS(off)

P1dB

GLP

Output power at 1dB gain compression VDS=10V,ID(RF off)=1.5A

f=13.75 – 14.50GHz

delta Vf method

Linear Power Gain

Drain current

1.8

PAE

Power added efficiency

Thermal resistance

Rth(ch-c) *2

3.6

C/W

*2 : Channel-case

Publication Date : Apr., 2011

12 3 4

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与MGFK38A3745_11相关器件

型号	品牌	获取价格	描述	数据表
MGFK38V2228	MITSUBISHI	获取价格	12.2-12.8GHz BAND 6W INTERNALLY MATCHED GaAs FET
MGFK38V2228-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio
MGFK38V2228-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio
MGFK38V2732	MITSUBISHI	获取价格	12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
MGFK38V2732-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio
MGFK39V4045	MITSUBISHI	获取价格	14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
MGFK39V4045_11	MITSUBISHI	获取价格	14.0-14.5 GHz BAND / 8W
MGFK39V4045-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio
MGFK41A4045	MITSUBISHI	获取价格	14.0-14.5 GHz BAND / 12W
MGFK44A4045	MITSUBISHI	获取价格	14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET

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