生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XDFM-F2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY, HIGH EFFICIENCY |
外壳连接: | SOURCE | 配置: | SINGLE |
最大漏极电流 (Abs) (ID): | 5.6 A | 最大漏极电流 (ID): | 5.6 A |
FET 技术: | JUNCTION | 最高频带: | KU BAND |
JESD-30 代码: | R-XDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 43 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFK38V2228-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio | |
MGFK38V2228-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio | |
MGFK38V2732 | MITSUBISHI |
获取价格 |
12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET | |
MGFK38V2732-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio | |
MGFK39V4045 | MITSUBISHI |
获取价格 |
14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET | |
MGFK39V4045_11 | MITSUBISHI |
获取价格 |
14.0-14.5 GHz BAND / 8W | |
MGFK39V4045-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio | |
MGFK41A4045 | MITSUBISHI |
获取价格 |
14.0-14.5 GHz BAND / 12W | |
MGFK44A4045 | MITSUBISHI |
获取价格 |
14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET | |
MGFK44A4045_11 | MITSUBISHI |
获取价格 |
14.0-14.5 GHz BAND / 25W |