Datasheet > MGFK30V4045_11

MGFK30V4045_11

更新时间： 2024-02-05 12:23:45

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	115K
描述
X/Ku band internally matched power GaAs FET

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中文翻译

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MGFK30V4045_11 数据手册

< X/Ku band internally matched power GaAs FET >

MGFK30V4045

14.0 – 14.5 GHz BAND / 1.1W

DESCRIPTION

The MGFK30V4045 is an internally impedance-matched

GaAs power FET especially designed for use in 14.0 – 14.5

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

FEATURES

Internally matched to 50(ohm) system

Flip-chip mounted

 High output power

P1dB=1.1W (TYP.) @f=14.0 – 14.5GHz

 High linear power gain

GLP=8.0dB (TYP.) @f=14.0 – 14.5GHz

 High power added efficiency

P.A.E.=24% (TYP.) @f=14.0 – 14.5GHz

APPLICATION

 14.0 – 14.5 GHz band power amplifiers

QUALITY GRADE

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=8V  ID=350mA Refer to Bias Procedure

Absolute maximum ratings (Ta=25C)

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

Symbol

Parameter

Ratings

Unit

Gate to drain

VGDO

breakdown voltage

-15

VGSO Gate to source breakdown voltage

-15

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

Drain current

1000

IGR

IGF

PT *1

Tch

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-3

175

C

Tstg

*1 : Tc=25C

-65 to +175

C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

800

300

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

1000

IDSS

VDS=3V,ID=350mA

VDS=3V,ID=2mA

-5

Gate to source cut-off voltage

-2

VGS(off)

P1dB

GLP

Output power at 1dB gain compression VDS=8V,ID(RF off)=350mA

29.5

dBm

f=14.0 – 14.5GHz

delta Vf method

Linear Power Gain

Power added efficiency

Thermal resistance

PAE

Rth(ch-c) *2

C/W

*2 : Channel-case

Publication Date : Apr., 2011

12 3

中文翻译

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与MGFK30V4045_11相关器件

型号	品牌	获取价格	描述	数据表
MGFK30V4045-01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
MGFK33M4045	MITSUBISHI	获取价格	Transistor,
MGFK33M4045-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio
MGFK33V4045	MITSUBISHI	获取价格	14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
MGFK33V4045_11	MITSUBISHI	获取价格	X/Ku band internally matched power GaAs FET
MGFK33V4045_97	MITSUBISHI	获取价格	14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
MGFK35V2228	MITSUBISHI	获取价格	12.2-12.8GHz BAND 3W INTERNALLY MATCHED GaAs FET
MGFK35V2228-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio
MGFK35V2228-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio
MGFK35V2732	MITSUBISHI	获取价格	12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET

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