品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | ![]() |
/ |
页数 | 文件大小 | 规格书 |
3页 | 100K | ![]() |
描述 | ||
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XDFM-F2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
其他特性: | HIGH RELIABILITY, HIGH EFFICIENCY | 外壳连接: | SOURCE |
配置: | SINGLE | 最大漏极电流 (Abs) (ID): | 2.8 A |
最大漏极电流 (ID): | 2.8 A | FET 技术: | JUNCTION |
最高频带: | KU BAND | JESD-30 代码: | R-XDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 27 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFK35V2732-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio |
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MGFK35V2732-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio |
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MGFK35V4045 | MITSUBISHI |
获取价格 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET |
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MGFK35V4045_03 | MITSUBISHI |
获取价格 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET |
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MGFK35V4045_11 | MITSUBISHI |
获取价格 |
X/Ku band internally matched power GaAs FET |
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MGFK35V4045-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio |
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MGFK35V4045-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio |
![]() |
MGFK36V4045 | MITSUBISHI |
获取价格 |
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET |
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MGFK36V4045-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio |
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MGFK37V4045 | MITSUBISHI |
获取价格 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET |
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