生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 10 V | 最大漏极电流 (ID): | 9.8 A |
FET 技术: | JUNCTION | 最高频带: | C BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 166 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
MGFC47A5864A | MITSUBISHI | Transistor |
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MGFC47A5867 | MITSUBISHI | Transistor |
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MGFC47A7785 | MITSUBISHI | 7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET |
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MGFC47B3436 | MITSUBISHI | RF Power Field-Effect Transistor |
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MGFC47B3436B | MITSUBISHI | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction |
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MGFC47B3538B | MITSUBISHI | C band Internally Matched Power GaAs FET |
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