MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V5964
5.9~6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
DESCRIPTION
Unit: millimeters
OUTLINE DRAWING
The MGFC42V5964 is an internally impedance-matched
GaAs power FET especially designed for use in 5.9~6.4GHz
band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
24+/-0.3
(1)
R1.25
R1.2
0.6+/-0.15
FEATURES
Class A operation
Internally matched to 50 ohm system
High output power
P1dB = 16W (TYP.) @ f=5.9~6.4GHz
High power gain
(2)
GLP = 9 dB (TYP.) @ f=5.9~6.4GHz
High power added efficiency
P.A.E. = 31 % (TYP.) @ f=5.9~6.4GHz
Low distortion for MGFC42V5964-51
IM3= -45 dBc(TYP.) @Po=32dBm S.C.L.
Thermal Resistance
(3)
20.4+/-0.2
13.4
Rth(ch-c)= 1.6 deg.C/W(TYP.)
APPLICATION
MGFC42V5964-01: 5.9~6.4GHz power amplifier
MGFC42V5964-51: 5.9~6.4GHz digital radio communication
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
QUALITY GRADE
IG
GF-18
RECOMMENDED BIAS CONDITIONS
VDS = 10 V
ID = 4.5 A (refer to bias procedure)
RG = 50 ohm
(Ta=25 deg.C)
ABSOLUTE MAXIMUM RATINGS
< Keep safety first in your circuit designs! >
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
-15
Unit
V
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety
when making your circuit designs, with appropriate measures
such as (1)placement of substitutive, auxiliary circuits, (2)use of
non-flammable material or (3)prevention against any malfunction
or mishap.
-15
V
15
A
IGR
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
-40
mA
mA
W
IGF
84
PT
78.9
175
Tch
deg.C
deg.C
Tstg
-65 ~ +175
*1 : Tc=25 deg.C
(Ta=25 deg.C)
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
Typ.
9
Max.
IDSS
gm
Saturated drain current
Transconductance
VDS=3V, VGS=0V
VDS=3V, ID=4.4A
VDS=3V, ID=80mA
-
12
A
S
-
-2
41.5
8
4
-
-4
-
VGS(off)
P1dB
GLP
ID
Gate to source cut-off voltage
Output power at 1dB gain compression
Linear power gain
-3
V
42.5
9
dBm
dB
VDS=10V, ID(RF off)=4.5A, f=5.9~6.4GHz
-
Drain current
-
4.5
31
-45
1.6
-
A
P.A.E.
IM3
Power added efficiency
-
-
%
3rd order IM distortion
*1
*2
-42
-
-
dBc
deg.C/W
Rth(ch-c) Thermal resistance
Delta Vf method
1.9
*1 : MGFC42V5964-51, 2 tone test, Po=32dBm Single Carrier Level, f=6.4GHz, Delta f=10MHz
*2 : Channel to case
May-02
MITSUBISHI
ELECTRIC