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MGFC42V5964-51 PDF预览

MGFC42V5964-51

更新时间： 2024-12-01 14:36:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网放大器晶体管
页数 文件大小 规格书
1页 42K
描述
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

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MGFC42V5964-51 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
Is Samacsys：N外壳连接：SOURCE
配置：SINGLE最大漏极电流 (Abs) (ID)：15 A
最大漏极电流 (ID)：12 AFET 技术：JUNCTION
最高频带：C BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：78.9 W最小功率增益 (Gp)：8 dB
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

MGFC42V5964-51 数据手册

  
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFC42V5964  
5.9~6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET  
DESCRIPTION  
Unit: millimeters  
OUTLINE DRAWING  
The MGFC42V5964 is an internally impedance-matched  
GaAs power FET especially designed for use in 5.9~6.4GHz  
band amplifiers. The hermetically sealed metal-ceramic  
package guarantees high reliability.  
24+/-0.3  
(1)  
R1.25  
R1.2  
0.6+/-0.15  
FEATURES  
Class A operation  
Internally matched to 50 ohm system  
High output power  
P1dB = 16W (TYP.) @ f=5.9~6.4GHz  
High power gain  
(2)  
GLP = 9 dB (TYP.) @ f=5.9~6.4GHz  
High power added efficiency  
P.A.E. = 31 % (TYP.) @ f=5.9~6.4GHz  
Low distortion for MGFC42V5964-51  
IM3= -45 dBc(TYP.) @Po=32dBm S.C.L.  
Thermal Resistance  
(3)  
20.4+/-0.2  
13.4  
Rth(ch-c)= 1.6 deg.C/W(TYP.)  
APPLICATION  
MGFC42V5964-01: 5.9~6.4GHz power amplifier  
MGFC42V5964-51: 5.9~6.4GHz digital radio communication  
(1): GATE  
(2): SOURCE (FLANGE)  
(3): DRAIN  
QUALITY GRADE  
IG  
GF-18  
RECOMMENDED BIAS CONDITIONS  
VDS = 10 V  
ID = 4.5 A (refer to bias procedure)  
RG = 50 ohm  
(Ta=25 deg.C)  
ABSOLUTE MAXIMUM RATINGS  
< Keep safety first in your circuit designs! >  
Symbol  
VGDO  
VGSO  
ID  
Parameter  
Gate to drain voltage  
Gate to source voltage  
Drain current  
Ratings  
-15  
Unit  
V
Mitsubishi Electric Corporation puts the maximum effort into  
making semiconductor products better and more reliable, but  
there is always the possibility that trouble may occur with them.  
Trouble with semiconductors may lead to personal injury, fire or  
property damage. Remember to give due consideration to safety  
when making your circuit designs, with appropriate measures  
such as (1)placement of substitutive, auxiliary circuits, (2)use of  
non-flammable material or (3)prevention against any malfunction  
or mishap.  
-15  
V
15  
A
IGR  
Reverse gate current  
Forward gate current  
Total power dissipation *1  
Channel temperature  
Storage temperature  
-40  
mA  
mA  
W
IGF  
84  
PT  
78.9  
175  
Tch  
deg.C  
deg.C  
Tstg  
-65 ~ +175  
*1 : Tc=25 deg.C  
(Ta=25 deg.C)  
ELECTRICAL CHARACTERISTICS  
Limits  
Symbol  
Parameter  
Test conditions  
Unit  
Min.  
Typ.  
9
Max.  
IDSS  
gm  
Saturated drain current  
Transconductance  
VDS=3V, VGS=0V  
VDS=3V, ID=4.4A  
VDS=3V, ID=80mA  
-
12  
A
S
-
-2  
41.5  
8
4
-
-4  
-
VGS(off)  
P1dB  
GLP  
ID  
Gate to source cut-off voltage  
Output power at 1dB gain compression  
Linear power gain  
-3  
V
42.5  
9
dBm  
dB  
VDS=10V, ID(RF off)=4.5A, f=5.9~6.4GHz  
-
Drain current  
-
4.5  
31  
-45  
1.6  
-
A
P.A.E.  
IM3  
Power added efficiency  
-
-
%
3rd order IM distortion  
*1  
*2  
-42  
-
-
dBc  
deg.C/W  
Rth(ch-c) Thermal resistance  
Delta Vf method  
1.9  
*1 : MGFC42V5964-51, 2 tone test, Po=32dBm Single Carrier Level, f=6.4GHz, Delta f=10MHz  
*2 : Channel to case  
May-02  
MITSUBISHI  
ELECTRIC  
1

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