生命周期: | Obsolete | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, R-XUUC-N3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.40 |
风险等级: | 5.83 | 配置: | SINGLE |
最大漏极电流 (Abs) (ID): | 0.06 A | 最大漏极电流 (ID): | 0.06 A |
FET 技术: | HIGH ELECTRON MOBILITY | 最高频带: | K BAND |
JESD-30 代码: | R-XUUC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 125 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | UNCASED CHIP |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 0.05 W |
最小功率增益 (Gp): | 12 dB | 认证状态: | Not Qualified |
子类别: | FET RF Small Signal | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFC4419G-A12 | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGFC4419G-A13 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGFC4424D-03 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGFC4427D-03 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGFC4453A-A03 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGFC4453A-A13 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGFC44V3436 | MITSUBISHI |
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3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET | |
MGFC44V3436-01 | MITSUBISHI |
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Transistor | |
MGFC44V3436-51 | MITSUBISHI |
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Transistor | |
MGFC44V3642 | MITSUBISHI |
获取价格 |
3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET |