Datasheet > 晶体管 > 射频场效应晶体管> MGFC42V5964A

MGFC42V5964A

更新时间： 2024-02-27 14:58:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	196K
描述
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MGFC42V5964A 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC42V5964A

5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET

DESCRIPTION

unit : mm

The MGFC42V5964A is an internally impedance matched

GaAs power FET especially designed for use in 5.9 - 6.4

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

OUTLINE

24 +/- 0.3

FEATURES

Internally matched to 50 ohm system

0.6 +/- 0.15

(1)

2MIN

R1.2

High output power

P1dB = 16W (TYP.) @ f=5.9 - 6.4 GHz

High power gain

(2)

GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz

High power added efficiency

P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz

Low Distortion[Item-51]

8.0 +/- 0.2

17.4 +/- 0.2

IM3=-45 dBc(MIN.)@Po=31.0dBm S.C.L.

(3)

20.4 +/- 0.2

16.7

2MIN

APPLICATION

item 01 : 5.9 - 6.4 GHz band power amplifier

item 51 : 5.9 - 6.4 GHz band digital radio communication

QUALITY GRADE

2.4 +/- 0.2

0.1 +/- 0.05

4.3 +/- 0.4

1.4

RECOMMENDED BIAS CONDITIONS

V_DS= 10 (V)

(1) gate

(2) source(flange)

(3)drain

ID = 4.5 (A)

Rg=25 (ohm) Refer to Bias Procedure

GF-38

ABSOLUTE MAXIMUM RATINGS

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them. Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (1)placement of

substitutive, auxiliary circuits, (2)use of non-flammable

material or (3)prevention against any malfunction or mishap.

Symbol

Parameter

Ratings

-15

Unit

VGDO Gate to drain voltage

VGSO Gate to source voltage

-15

Drain current

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Channel temperature

Storage temperature

-40

93.7

175

Tch

Tstg

deg.C

-65 / +175

*1 : Tc=25 Deg.C

ABSOLUTE MAXIMUM RATINGS

Limits

Symbol

Parameter

Test conditions

Unit

Min

Typ

Max

IDSS

Saturated drain current

Transconductance

VDS = 3V , VGS = 0V

VDS = 3V , ID = 4.4A

VDS = 3V , ID = 80mA

VGS(off) Gate to source cut-off voltage

-2

-3

-4

Output power at 1dB gain

compression

P1dB

41.5

42.5

dBm

GLP

Linear power gain

VDS=10V, ID(RF off)=4.5A, f=5.9-6.4GHz

Drain current

4.5

-45

PAE

IM3

Power added efficiency

3rd order IM distortion *1

-42

dBc

Rth(ch-c) Thermal resistance

Delta Vf method

1.6

Deg.C/W

*1 : item -51,2 tone test,Po=31.0dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz *2 : Channel-case

MITSUBISHI

ELECTRIC

June/2004

12 3

下载PDF

与MGFC42V5964A相关器件

型号	品牌	描述	获取价格	数据表
MGFC42V5964A-01	MITSUBISHI	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction	获取价格
MGFC42V5964A-51	MITSUBISHI	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction	获取价格
MGFC42V6472	MITSUBISHI	6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET	获取价格
MGFC42V6472A	MITSUBISHI	6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET	获取价格
MGFC42V7177	MITSUBISHI	C band Internally Matched Power GaAs FET	获取价格
MGFC42V7785A	MITSUBISHI	7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET	获取价格

与MGFC42V5964A相关文章

STM32H743技术深度剖析与应用案例探索
2024-05-30

15
LM321中文资料解析：引脚功能介绍、技术特点、技术特性分析
2024-05-30

15
74HC14芯片资料介绍：性能特性分析、引脚介绍
2024-05-30

13
LM1875芯片手册：功放参数分析、引脚说明、电路设计要点
2024-05-30

10

产品中心

服务支持

精选活动

关于我们

帮助中心

MGFC42V5964A

MGFC42V5964A 数据手册

与MGFC42V5964A相关器件

与MGFC42V5964A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MGFC42V5964A

MGFC42V5964A 数据手册

与MGFC42V5964A相关器件

与MGFC42V5964A相关文章

您还可以找

您在本页遇到什么问题？