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MGFC42V6472A PDF预览

MGFC42V6472A

更新时间： 2024-09-23 04:10:43
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体射频场效应晶体管功效放大器局域网
页数 文件大小 规格书
3页 220K
描述
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET

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中文翻译

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MGFC42V6472A 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-XDFM-F2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.29.00.75
风险等级：5.84Is Samacsys：N
其他特性：HIGH RELIABILITY, HIGH EFFICIENCY外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：10 V
最大漏极电流 (Abs) (ID)：12 A最大漏极电流 (ID)：4.5 A
FET 技术：JUNCTION最高频带：C BAND
JESD-30 代码：R-XDFM-F2元件数量：1
端子数量：2工作模式：DEPLETION MODE
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL功耗环境最大值：93.7 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

MGFC42V6472A 数据手册

 浏览型号MGFC42V6472A的Datasheet PDF文件第2页浏览型号MGFC42V6472A的Datasheet PDF文件第3页 
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFC42V6472A  
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET  
DESCRIPTION  
The MGFC42V6472A is an internally impedance matched  
GaAs power FET especially designed for use in 6.4 - 7.2  
GHz band amplifiers. The hermetically sealed metal-ceramic  
package guarantees high reliability.  
O U TLIN E D R AW IN G U nit:millimeters (inches)  
24 + /- 0 .3  
FEATURES  
Internally matched to 50 ohm system  
0.6 + /- 0.15  
(1)  
High output power  
P1dB = 16W (TYP.) @ f=6.4 - 7.2 GHz  
High power gain  
R 1.2  
GLP =8.0 dB (TYP.) @ f=6.4 - 7.2 GHz  
High power added efficiency  
P.A.E. = 31 % (TYP.) @ f=6.4 - 7.2 GHz  
Low Distortion[Item-51]  
(2)  
IM3=-45 dBc(TYP.)@Po=31.0dBm S.C.L.  
(3)  
20.4 + /- 0.2  
16.7  
APPLICATION  
item 01 : 6.4 - 7.2 GHz band power amplifier  
item 51 : 6.4 - 7.2 GHz band digital radio communication  
QUALITY GRADE  
IG  
RECOMMENDED BIAS CONDITIONS  
VDS = 10 (V)  
(1) GATE  
(2) SOURCE(FIANGE)  
ID = 4.5 (A)  
(3) DRAIN  
G F-38  
Rg=25 (ohm) Refer to Bias Procedure  
ABSOLUTE MAXIMUM RATINGS  
< Keep safety first in your circuit designs! >  
Mitsubishi Electric Corporation puts the maximum effort into  
making semiconductor products better and more reliable,  
but there is always the possibility that trouble may occur  
with them. Trouble with semiconductors may lead to personal  
injury, fire or property damage. Remember to give due  
consideration to safety when making your circuit designs,  
with appropriate measures such as (1)placement of  
Symbol  
Parameter  
Ratings  
-15  
Unit  
V
VGDO Gate to drain voltage  
VGSO Gate to source voltage  
-15  
V
ID  
Drain current  
15  
A
IGR  
IGF  
PT  
Reverse gate current  
Forward gate current  
Total power dissipation  
Channel temperature  
Storage temperature  
-40  
mA  
mA  
W
84  
93.7  
175  
Tch  
Tstg  
deg.C  
deg.C  
substitutive, auxiliary circuits, (2)use of non-flammable  
material or (3)prevention against any malfunction or mishap.  
-65 / +175  
*1 : Tc=25 Deg.C  
ABSOLUTE MAXIMUM RATINGS  
Limits  
Typ  
9
Symbol  
Parameter  
Test conditions  
Unit  
Min  
Max  
12  
-
IDSS  
Gm  
Saturated drain current  
Transconductance  
VDS = 3V , VGS = 0V  
VDS = 3V , ID = 4.4A  
VDS = 3V , ID = 80mA  
-
-
A
S
V
4
VGS(off) Gate to source cut-off voltage  
-2  
-3  
-4  
Output power at 1dB gain  
compression  
P1dB  
41.5  
42.5  
-
dBm  
GLP  
ID  
Linear power gain  
VDS=10V, ID(RF off)=4.5A, f=6.4-7.2GHz  
7
8
4.5  
31  
-45  
-
-
-
dB  
A
Drain current  
-
-
PAE  
IM3  
Power added efficiency  
3rd order IM distortion *1  
-
%
-42  
-
-
dBc  
Rth(ch-c) Thermal resistance  
*2  
Delta Vf method  
1.6  
Deg.C/W  
*1 : item -51,2 tone test,Po=31.0dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case  
Oct-'03  
MITSUBISHI  
ELECTRIC  
123

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