生命周期: | Obsolete | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, R-XUUC-N6 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.40 | 风险等级: | 5.84 |
其他特性: | LOW NOISE | 配置: | SINGLE |
最小漏源击穿电压: | 2 V | 最大漏极电流 (Abs) (ID): | 0.06 A |
最大漏极电流 (ID): | 0.01 A | FET 技术: | HIGH ELECTRON MOBILITY |
最高频带: | K BAND | JESD-30 代码: | R-XUUC-N6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | UNCASED CHIP | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 0.05 W | 最小功率增益 (Gp): | 12 dB |
认证状态: | Not Qualified | 子类别: | FET RF Small Signal |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | UPPER | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFC44V3436 | MITSUBISHI |
获取价格 |
3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET | |
MGFC44V3436-01 | MITSUBISHI |
获取价格 |
Transistor | |
MGFC44V3436-51 | MITSUBISHI |
获取价格 |
Transistor | |
MGFC44V3642 | MITSUBISHI |
获取价格 |
3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET | |
MGFC44V3642_98 | MITSUBISHI |
获取价格 |
3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET | |
MGFC44V3642-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC44V4450 | MITSUBISHI |
获取价格 |
4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET | |
MGFC44V4450_98 | MITSUBISHI |
获取价格 |
4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET | |
MGFC44V5964 | MITSUBISHI |
获取价格 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET | |
MGFC44V5964_97 | MITSUBISHI |
获取价格 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET |