MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V7785A
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC42V7785A is an internally impedance-matched
GaAs power FET especially designed for use in 7.7 ~ 8.5
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
O U
T
LIN E
D R AW IN G
U nit:millimeters
(inches)
24 +/- 0.3
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 16W (TYP.) @ f=7.7~8.5GHz
High power gain
0.6 +/- 0.15
(1)
R 1.2
GLP = 7 dB (TYP.) @ f=7.7~8.5GHz
High power added efficiency
P.A.E. = 28 % (TYP.) @ f=7.7~8.5GHz
Low distortion [ item -51 ]
(2)
IM3= -45 dBc(TYP.) @Po=32dBm S.C.L.
(3)
20.4 +/- 0.2
16.7
APPLICATION
item 01 : 7.7~8.5 GHz band power amplifier
item 51 : 7.7~8.5 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
(1) G AT E
(2) S O U R C E (F IAN G E )
(3) D R AIN
ID = 4.5 (A)
Refer to Bias Procedure
G F-38
RG= 25 (ohm)
(Ta=25 deg.C)
ABSOLUTE MAXIMUM RATINGS
< Keep safety first in your circuit designs! >
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
Unit
V
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety
when making your circuit designs, with appropriate measures
such as (1)placement of substitutive, auxiliary circuits, (2)use of
non-flammable material or (3)prevention against any malfunction
or mishap.
-15
-15
V
15
A
IGR
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
-40
mA
mA
W
IGF
84
PT
93.7
175
Tch
deg.C
deg.C
Tstg
-65 / +175
*1 : Tc=25 deg.C
(Ta=25 deg.C)
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
Typ.
9
Max.
IDSS
gm
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain compression
Linear power gain
VDS=3V, VGS=0V
VDS=3V, ID=4.4A
VDS=3V, ID=80mA
-
-
12
-
A
S
4
VGS(off)
P1dB
GLP
ID
-2
41
6
-
-4
-
V
42
7
dBm
dB
A
VDS=10V, ID(RF off)=4.5A, f=7.7~8.5GHz
-
Drain current
-
4
-
P.A.E.
IM3
Power added efficiency
-
28
-45
-
-
%
3rd order IM distortion
*1
*2
-42
-
-
dBc
Rth(ch-c) Thermal resistance
Delta Vf method
1.6 deg.C/W
*1 : item -51, 2 tone test, Po=32dBm Single Carrier Level, f=8.5GHz, Delta f=10MHz
*2 : Channel to case
June/2004
MITSUBISHI
ELECTRIC