Datasheet > MGFC42V7785A_04

MGFC42V7785A_04

更新时间： 2024-12-01 04:10:43

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	210K
描述
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET

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MGFC42V7785A_04 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC42V7785A

7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC42V7785A is an internally impedance-matched

GaAs power FET especially designed for use in 7.7 ~ 8.5

GHz band amplifiers.The hermetically sealed metal-ceramic

package guarantees high reliability.

O U

LIN E

D R AW IN G

U nit:millimeters

(inches)

24 +/- 0.3

FEATURES

Class A operation

Internally matched to 50(ohm) system

High output power

P1dB = 16W (TYP.) @ f=7.7~8.5GHz

High power gain

0.6 +/- 0.15

(1)

R 1.2

GLP = 7 dB (TYP.) @ f=7.7~8.5GHz

High power added efficiency

P.A.E. = 28 % (TYP.) @ f=7.7~8.5GHz

Low distortion [ item -51 ]

(2)

IM3= -45 dBc(TYP.) @Po=32dBm S.C.L.

(3)

20.4 +/- 0.2

16.7

APPLICATION

item 01 : 7.7~8.5 GHz band power amplifier

item 51 : 7.7~8.5 GHz band digital radio communication

QUALITY GRADE

RECOMMENDED BIAS CONDITIONS

VDS = 10 (V)

(1) G AT E

(2) S O U R C E (F IAN G E )

(3) D R AIN

ID = 4.5 (A)

Refer to Bias Procedure

G F-38

RG= 25 (ohm)

(Ta=25 deg.C)

ABSOLUTE MAXIMUM RATINGS

< Keep safety first in your circuit designs! >

Symbol

VGDO

VGSO

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

Unit

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety

when making your circuit designs, with appropriate measures

such as (1)placement of substitutive, auxiliary circuits, (2)use of

non-flammable material or (3)prevention against any malfunction

or mishap.

-15

IGR

Reverse gate current

Forward gate current

Total power dissipation *1

Channel temperature

Storage temperature

-40

IGF

93.7

175

Tch

deg.C

Tstg

-65 / +175

*1 : Tc=25 deg.C

(Ta=25 deg.C)

ELECTRICAL CHARACTERISTICS

Limits

Symbol

Parameter

Test conditions

Unit

Min.

Typ.

Max.

IDSS

Saturated drain current

Transconductance

Gate to source cut-off voltage

Output power at 1dB gain compression

Linear power gain

VDS=3V, VGS=0V

VDS=3V, ID=4.4A

VDS=3V, ID=80mA

VGS(off)

P1dB

GLP

-2

-4

dBm

VDS=10V, ID(RF off)=4.5A, f=7.7~8.5GHz

Drain current

P.A.E.

IM3

Power added efficiency

-45

3rd order IM distortion

-42

dBc

Rth(ch-c) Thermal resistance

Delta Vf method

1.6 deg.C/W

*1 : item -51, 2 tone test, Po=32dBm Single Carrier Level, f=8.5GHz, Delta f=10MHz

*2 : Channel to case

June/2004

MITSUBISHI

ELECTRIC

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与MGFC42V7785A_04相关器件

型号	品牌	获取价格	描述	数据表
MGFC4414D-02	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4416D-02	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4416D-03	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4417D-02	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4417D-03	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4418D-02	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4418D-03	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4418E-03	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4419G	MITSUBISHI	获取价格	InGaAs HEMT Chip
MGFC4419G-A01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H

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