Datasheet > MGFC42V7177

MGFC42V7177

更新时间： 2024-09-23 12:23:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	105K
描述
C band Internally Matched Power GaAs FET

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MGFC42V7177 数据手册

MGFC42V7177

7.1 - 7.7GHz BAND / 16W

DESCRIPTION

The MGFC42V7177 is an internally impedance-matched GaAs

power FET especially designed for use in 7.1 – 7.7 GHz band

amplifiers. The hermetically sealed metal-ceramic package

guarantees high reliability.

FEATURES

Crass A operation

Internally matched to 50(ohm)

 High output power: P1dB = 16 W (typ.) @ P1dB

 High power gain: GLP = 8.0 dB (typ.)

 High power added efficiency: PAE = 30 % (typ.)

APPLICATIONS

 item 01 : 7.1 – 7.7GHz band power amplifier

 item 51 : 7.1 – 7.7GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 Vds = 10 V  Ids = 4.5 A  Rg = 25 

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable, but there is always the possibility

that trouble may occur with them.

Absolute maximum ratings (Ta = 25 C)

Symbol

Parameter

Ratings

-15

Unit

VGDO Gate to drain breakdown voltage

VGSO Gate to source breakdown

Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such as

(I) placement of substitutive , auxiliary circuits , (ii)

use of non-flammable material or (iii) prevention

against any malfunction or mishap.

Drain current

-40

78.9

IGR

IGF

PT *1

Tch

Tstg

Reverse gate current

Forward gate current

Total power dissipation

Channel temperature

Storage temperature

C

175

- 65 to +175

*1: Tc=25C

Electrical characteristics ( Ta = 25° C)

Limits

Symbol

Parameter

Test conditions

Unit

Min.

-2

Typ.

-3

Max.

-4

VGS(off)

Gate to sourse cut-off voltage

1dB gain comp. output power

Linear Power Gain

VDS = 3V, ID = 80mA

dBm

P1dB

GLP

VDS = 10V,

ID = 4.5A,

f=7.1 – 7.7GHz

IDS (RF)

 add

IM3 *2

Drain Current at P1dB

Power added efficiency

3rd order IM distortion

4.5

-45

-42

dBc

°C/W

Rth(ch-c) *3 Thermal resistance

Delta Vf Method

1.9

*2: item -51, 2 tone test, Po=32dBm single carrier level, f=7.7GHz, delta f=10MHz

*3 : Channel to case

Publication Date : May, 2012

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与MGFC42V7177相关器件

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MGFC4414D-02	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4416D-02	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4416D-03	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4417D-02	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4417D-03	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4418D-02	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4418D-03	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGFC4418E-03	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H

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