MGF4316

更新时间： 2024-11-19 22:00:19

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	36K
描述
Super Low Noise InGaAs HEMT

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MGF4316 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGF431xG

Super Low Noise InGaAs HEMT

DESCRIPTION

OUTLINE DRAWING

The MGF431xG series super-low-noise HEMT(High Electron

Mobility Transistor) is designed for use in L to K band amplifiers.

The hermetically sealed metal-ceramic package assures

minimum parasitic losses, and has a configuration suitable for

microstrip circuits.

FEATURES

Low noise figure

@ f=12GHz

MGF4316G : NF min.=0.80dB (MAX.)

MGF4319G : NF min.=0.50dB (MAX.)

High associated gain

Gs=12.0 dB (MIN.)

@ f=12GHz

APPLICATION

L to K band low noise amplifiers.

QUALITY GRADE

RECOMMENDED BIAS CONDITIONS

VDS=2V , ID=10mA

GD-4

Refer to Bias Procedure

( Ta=25°C )

ABSOLUTE MAXIMUM RATINGS

< Keep safety first in your circuit designs! >

Symbol

VGDO

VGSO

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

Unit

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them.Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (i)placement of

-4

°C

Total power dissipation

Channel temperature

Storage temperature

Tch

125

Tstg

-65 ~ +125

substitutive, auxiliary circuits, (ii)use of non-flammable

material or (iii)prevention against any malfunction or mishap.

( Ta=25°C )

ELECTRICAL CHARACTERISTICS

Limits

Symbol

Parameter

Test conditions

Unit

Min.

-3

Typ.

—

Max

—

V(BR)GDO

IGSS

Gate to drain breakdown voltage IG= -10µA

Gate to source leakage current

Saturated drain current

Gate to Source cut-off voltage

Transconductance

VGS= -2V, VDS=0V

VGS=0V, VDS=2V

—

µA

IDSS

-0.1

—

VGS (off)

VDS=2V, ID=500µA

—

-1.5

—

VDS=2V, ID=10mA

Associated gain

VDS=2V, ID=10mA, f=12GHz

—

13.5

—

MGF4316G

MGF4319G

0.8

0.5

—

VDS=2V, ID=10mA, f=12GHz

NFmin

Minimum noise figure

—

Rth (ch-a)

Thermal resistance

DVf method

—

625

˚C/W

*1 : Channel to ambient

as of Apr.'98

MITSUBISHI

ELECTRIC

12 3

中文翻译

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与MGF4316相关器件

型号	品牌	获取价格	描述	数据表
MGF4316C-01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGF4316D-01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H
MGF4316F	MITSUBISHI	获取价格	Transistor,
MGF4316F-65	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H
MGF4316G	MITSUBISHI	获取价格	Super Low Noise InGaAs HEMT
MGF4317C-01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MGF4317D-01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H
MGF4318D-01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H
MGF4318E-01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H
MGF4318E-30	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H

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