Datasheet > MGF1451A

MGF1451A

更新时间： 2024-11-09 04:16:07

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
4页	181K
描述
Low Noise MES FET

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数据手册

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MGF1451A 数据手册

Dec./2006

MITSUBISHI SEMICONDUTOR <GaAs FET>

MGF1451A

Low Noise MES FET

DESCRIPTION

The MGF1451A is designed for use in S to Ku band power

amplifiers.

Outline Drawing

FEATURES

High gain and High P1dB

Glp=10.5dB , P1dB=13dBm (Typ.) @ f=12GHz

APPLICATION

S to Ku band power Amplifiers

QUALITY GRADE

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

ABSOLUTE MAXIMUM RATINGS

(Ta=25°C )

Ratings

Symbol

V_GDO

V_GSO

I_D

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Unit

-8

120

°C

T_ch

T_stg

Total power dissipation

Channel temperature

Storage temperature

300

175

-55 to +175

°C

ELECTRICAL CHARACTERISTICS

(Ta=25°C )

Limits

Synbol

V(BR)GDO

V(BR)GSO

IGSS

Parameter

Test conditions

MIN.

-8

TYP.

MAX

Unit

Gate to drain breakdown voltage

Gate to source breakdown voltage IG=-30

Gate to source leakage current

Saturated drain current

IG=-30

VGS=-3V

VDS=0V

VGS=0V

VDS=3V

IDSS

VGS(off)

Glp

-0.3

9.0

11.0

-1.4

10.5

13.0

120

-3.5

Gate to source cut-off voltage

Linear Power Gain

ID=300μA

VDS=3V

ID=30mA

f=12GHz

P1dB

Rt.

Output Power at 1dB gain

Compression

Thermal Resistance

dBm

420

℃/W

Decl/2006

MITSUBISHI

(1/4)

12 3 4

中文翻译

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