Datasheet > MGF1951A_1

MGF1951A_1

更新时间： 2024-11-20 04:16:07

品牌	Logo	应用领域
三菱 - MITSUBISHI		微波
页数	文件大小	规格书
5页	145K
描述
Microwave Power MES FET

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MGF1951A_1 数据手册

June/2004

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGF1951A

Microwave Power MES FET (Leadless Ceramic Package)

DESCRIPTION

The MGF1951A is designed for use in S to Ku band power

amplifiers.

Outline Drawing

The lead-less ceramic package assures minimum parasitic losses.

FEATURES

High gain and High P1dB

Glp=9.0dB , P1dB=13dBm (Typ.) @ f=12GHz

Fig.1

APPLICATION

S to Ku band power Amplifiers

QUALITY GRADE

ORDERING INFORMATION

Tape & reel 3000pcs./reel

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

ABSOLUTE MAXIMUM RATINGS

(Ta=25°C )

Symbol

V_GDO

V_GSO

I_D

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

Unit

-8

120

°C

T_ch

T_stg

Total power dissipation

Channel temperature

Storage temperature

300

125

-65 to +125

°C

ELECTRICAL CHARACTERISTICS

(Ta=25°C )

Test conditions

Synbol

Parameter

Limits

TYP.

-15

Unit

MIN.

-8

MAX

V(BR)GDO

I_DSS

Gate to drain breakdown voltage

Saturated drain current

Gate to source cut-off voltage

Output Power at 1dB gain

Compression

Ig=-30µA

V_GS=0V,V_DS=3V

120

-3.5

V_GS(off)

V_DS=3V,I_D=300µA

-0.3

-1.4

=3V,ID=30mA

P1dB

f=12GHz

=3V,ID=30mA

dBm

Glp

Linear Power Gain

f=12GHz,Pin=-5dBm

MITSUBISHI

June /2004

(1/5)

12 3 4 5

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