品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | 微波 | |
页数 | 文件大小 | 规格书 |
3页 | 240K | |
描述 | ||
MICROWAVE POWER GaAs FET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGF2430A-01 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S | |
MGF2430A-02 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio | |
MGF2445 | MITSUBISHI |
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MICROWAVE POWER GaAs FET | |
MGF2445-01 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S | |
MGF2445-11 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio | |
MGF2445A | MITSUBISHI |
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MICROWAVE POWER GaAs FET | |
MGF2445A_1 | MITSUBISHI |
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MICROWAVE POWER GaAs FET | |
MGF4314C-01 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H | |
MGF4314E | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGF4314E-01 | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H |