Datasheet > MGF1801B_1

MGF1801B_1

更新时间： 2024-11-20 04:16:07

品牌	Logo	应用领域
三菱 - MITSUBISHI		微波
页数	文件大小	规格书
4页	180K
描述
MICROWAVE POWER GaAs FET

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中文翻译

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MGF1801B_1 数据手册

MITSUBISHI SEMICONDUCTOR GaAs FET

MGF1801B

MICROWAVE POWER GaAs FET

Unit:millimeters

DESCRIPTION

The MGF1801B, medium-power GaAs FET with an N-channel

OUTLINE DRAWING

Schottky gate, is designed for use in S to X band amplifiers and

4MIN.

oscillators. The hermetically sealed metalceramic

package

assures minimum parasitic losses, and has a configuration suitable

for microstrip circuits.

0.5±0.15

FEATURES

• High output power at 1dB gain compression

P1dB=23dBm(TYP.)

• High linear power gain

GLP=9dB(TYP.)

@f=8GHz

• High reliability and stability

0.5±0.15

APPLICATION

S to X band medium-power amplifiers and oscillators.

2.5±0.2

QUALITY GRADE

• IG

RECOMMENDED BIAS CONDITIONS

• VDS=6V

GATE

• ID=100mA

SOURCE

DRAIN

• Refer to Bias Procedure

GD-10

ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)

Symbol

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

Unit

VGDO

VGSO

-8

250

Reverse gate current

IGR

IGF

Tch

-0.6

1.5

Forward gate current

Total power dissipation

Channel temperature

Storage temperature

1.2

175

-65 to +175

˚C

Tstg

˚C

*1:TC=25˚C

ELECTRICAL CHARACTERISTICS (Ta=25˚C)

Limits

Typ

Symbol

Parameter

Test conditions

Unit

Min

-8

Max

–

V(BR)GDO

Gate to drain breakdown voltage

IG=-200µA

–

V(BR)GSO Gate to source breakdown voltage

-8

IGSS

Gate to source leakage current

Saturated drain current

Gate source cut-off voltage

Transconductance

–

VGS=-3V,VDS=0V

VGS=0V,VDS=3V

VDS=3V,ID=100µA

VDS=3V,ID=100mA

250

-4.5

–

µA

IDSS

200

–

150

-1.5

VGS(off)

VDS=6V,ID=100mA,f=8GHz

DVf method

Linear power gain

GLP

–

Output power at 1dB gain

compression

21.8

–

23.0

–

dBm

P1dB

125

˚C/W

Thermal resistance

Rth(ch-c)

*1:Channel to ambient

June/2004

12 3 4

中文翻译

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