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SEMICONDUCTOR TECHNICAL DATA
MCM67M618A
Product Preview
64K x 18 Bit BurstRAM
Synchronous Fast Static RAM
With Burst Counter and Self–Timed Write
The MCM67M618A is a 1,179,648 bit synchronous static random access
memory designed to provide a burstable, high–performance, secondary cache
for the MC68040 and PowerPC microprocessors. It is organized as 65,536
words of 18 bits, fabricated using Motorola’s high–performance silicon–gate
BiCMOS technology. The device integrates input registers, a 2–bit counter, high
speed SRAM, and high drive capability outputs onto a single monolithic circuit
for reduced parts count implementation of cache data RAM applications. Syn-
chronousdesignallowsprecisecyclecontrolwiththeuseofanexternalclock(K).
BiCMOS circuitry reduces the overall power consumption of the integrated func-
tions for greater reliability.
FN PACKAGE
PLASTIC
CASE 778–02
PIN ASSIGNMENT
7
6
5
4
3
2
1 52 51 50 49 48 47
46
8
9
Addresses (A0 – A15), data inputs (DQ0 – DQ17), and all control signals,
except output enable (G), are clock (K) controlled through positive–edge–
triggered noninverting registers.
DQ9
DQ10
DQ8
DQ7
DQ6
45
44
43
42
41
V
V
10
CC
SS
11
12
13
14
15
V
Bursts can be initiated with either transfer start processor (TSP) or transfer
start cache controller (TSC) input pins. Subsequent burst addresses are gen-
erated internally by the MCM67M618A (burst sequence imitates that of the
MC68040) and controlled by the burst address advance (BAA) input pin. The
following pages provide more detailed information on burst controls.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased flexibility for incoming signals.
CC
DQ11
DQ12
DQ13
DQ14
V
DQ5
SS
40 DQ4
39 DQ3
38 DQ2
V
16
17
SS
V
37
V
V
CC
SS
CC
DQ15
DQ16
DQ17
18
19
20
36
35 DQ1
34 DQ0
Dual write enables (LW and UW) are provided to allow individually writeable
bytes. LW controls DQ0 – DQ8 (the lower bits), while UW controls DQ9 – DQ17
(the upper bits).
21 22 23 24 25 26 27 28 29 30 31 32 33
This device is ideally suited for systems that require wide data bus widths and
cache memory.
PIN NAMES
•
•
•
•
•
•
•
•
•
•
Single 5 V ± 5% Power Supply
Fast Access Times: 9/10/12 ns Max
Byte Writeable via Dual Write Strobes
Internal Input Registers (Address, Data, Control)
Internally Self–Timed Write Cycle
TSP, TSC, and BAA Burst Control Pins
Asynchronous Output Enable Controlled Three–State Outputs
Common Data Inputs and Data Outputs
High Board Density 52–PLCC Package
3.3 V I/O Compatible
A0 – A15 . . . . . . . . . . . . . . . . Address Inputs
K . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clock
BAA . . . . . . . . . . . . Burst Address Advance
LW . . . . . . . . . . . . Lower Byte Write Enable
UW . . . . . . . . . . . . Upper Byte Write Enable
TSP, TSC . . . . . . . . . . . . . . . . Transfer Start
E . . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable
G . . . . . . . . . . . . . . . . . . . . . . Output Enable
DQ0 – DQ17 . . . . . . . . . . Data Input/Output
V
CC
V
SS
. . . . . . . . . . . . . . . . + 5 V Power Supply
. . . . . . . . . . . . . . . . . . . . . . . . . . Ground
All power supply and ground pins must be
connected for proper operation of the device.
BurstRAM is a trademark of Motorola, Inc.
PowerPC is a trademark of IBM Corp.
This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice.
REV 1
5/95
Motorola, Inc. 1994
MOTOROLA FAST SRAM
MCM67M618A
1