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MC-4516CD64ES-A10BL

更新时间： 2024-11-18 13:11:15
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日电电子 - NEC 存储内存集成电路动态存储器时钟
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MC-4516CD64ES-A10BL 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-4516CD64ES, 4516CD64PS  
16 M-WORD BY 64-BIT  
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)  
Description  
The MC-4516CD64ES and MC-4516CD64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module  
(Small Outline DIMM) on which 8 pieces of 128 M SDRAM: µPD45128163 are assembled.  
These modules provide high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
• 16,777,216 words by 64 bits organization  
• Clock frequency and access time from CLK  
Part number  
/CAS latency  
CL = 3  
Clock frequency (MAX.)  
100 MHz  
Access time from CLK (MAX.)  
MC-4516CD64ES-A10B  
7 ns  
8 ns  
7 ns  
8 ns  
CL = 2  
67 MHz  
★
MC-4516CD64PS-A10B  
CL = 3  
100 MHz  
CL = 2  
67 MHz  
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
• Pulsed interface  
• Possible to assert random column address in every cycle  
• Quad internal banks controlled by BA0, BA1 (Bank Select)  
• Programmable burst-length (1, 2, 4, 8 and Full Page)  
• Programmable wrap sequence (Sequential / Interleave)  
• Programmable /CAS latency (2, 3)  
• Automatic precharge and controlled precharge  
• CBR (Auto) refresh and self refresh  
• Single 3.3V ± 0.3V power supply  
• LVTTL compatible  
• 4,096 refresh cycles/64 ms  
• Burst termination by Burst Stop command and Precharge command  
• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)  
• Unbuffered type  
• Serial PD  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
The mark • shows major revised points.  
Document No. M13612EJ5V0DS00 (5th edition)  
Date Published February 2000 NS CP(K)  
Printed in Japan  
1998  
©
1234567...16

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与MC-4516CD64ES-A10BL相关器件

型号 品牌 获取价格 描述 数据表
MC-4516CD64PS NEC

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 		16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD64PS ELPIDA

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 		16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD64PS-A10B ELPIDA

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 		16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD64PS-A10B NEC

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 		16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516DA724F-A80 NEC

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 		Synchronous DRAM Module, 16MX72, 6.5ns, MOS, DIM-168
MC-4516DA726 NEC

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726 ELPIDA

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726EFC-A10 ELPIDA

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726EFC-A10 NEC

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726EFC-A10 RENESAS

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 		MEMORY MODULE,SDRAM,16MX72,CMOS,DIMM,168PIN,PLASTIC

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