Datasheet > MC-4516DA726LF-A80

MC-4516DA726LF-A80

更新时间： 2024-11-18 14:53:11

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器内存集成电路
页数	文件大小	规格书
24页	247K
描述
Synchronous DRAM Module, 16MX72, 6ns, MOS, DIMM-168

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技术参数
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MC-4516DA726LF-A80 技术参数

生命周期：	Obsolete	零件包装代码：	DIMM
包装说明：	,	针数：	168
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.36	风险等级：	5.43
访问模式：	FOUR BANK PAGE BURST	最长访问时间：	6 ns
JESD-30 代码：	R-XDMA-N168	内存密度：	1207959552 bit
内存集成电路类型：	SYNCHRONOUS DRAM MODULE	内存宽度：	72
功能数量：	1	端口数量：	1
端子数量：	168	字数：	16777216 words
字数代码：	16000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	16MX72	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	MICROELECTRONIC ASSEMBLY
认证状态：	Not Qualified	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	3 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	NO	技术：	MOS
温度等级：	COMMERCIAL	端子形式：	NO LEAD
端子位置：	DUAL	Base Number Matches：	1

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4516DA726

16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE

REGISTERED TYPE

Description

The MC-4516DA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of

64M SDRAM: µPD4564441 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 16,777,216 words by 72 bits organization (ECC type)

• Clock frequency and access time from CLK

Clock frequency

(MAX.)

Access time from CLK

(MAX.)

Part number

/CAS latency

Module type

MC-4516DA726F-A80,

MC-4516DA726LF-A80

MC-4516DA726F-A10,

MC-4516DA726LF-A10

MC-4516DA726LFB-A80

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

125 MHz

100 MHz

77 MHz

6 ns

7 ns

6 ns

7 ns

PC100 Registered DIMM

Rev. 1.0 Compliant

125 MHz

100 MHz

77 MHz

PC100 Registered DIMM

Rev. 1.2 Compliant

★

MC-4516DA726LFB-A10

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and Full Page)

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ±0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Registered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

1998

Document No. M13203EJ4V0DS00 (4th edition)

Date Published April 1999 NS CP(K)

Printed in Japan

The mark ★ shows major revised points.

12 3 4 5 6 7...24

中文翻译

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与MC-4516DA726LF-A80相关器件

型号	品牌	获取价格	描述	数据表
MC-4516DA726LFB-A10	ELPIDA	获取价格	Synchronous DRAM Module, 16MX72, 6ns, MOS, DIMM-168
MC-4516DA726LFB-A80	NEC	获取价格	Synchronous DRAM Module, 16MX72, 6ns, MOS, DIMM-168
MC-4516DA726PFC-A10	ELPIDA	获取价格	16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726PFC-A10	NEC	获取价格	16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726PFC-A80	NEC	获取价格	16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726PFC-A80	ELPIDA	获取价格	16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726XFC-A10	ELPIDA	获取价格	16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726XFC-A80	ELPIDA	获取价格	16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA727	NEC	获取价格	16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA727	ELPIDA	获取价格	16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE

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