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MC-4516DA726PFC-A10 PDF预览

MC-4516DA726PFC-A10

更新时间： 2024-11-17 22:21:03
品牌 Logo 应用领域
日电电子 - NEC 存储内存集成电路动态存储器
页数 文件大小 规格书
16页 233K
描述
16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE

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中文翻译

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MC-4516DA726PFC-A10 技术参数

生命周期：Transferred零件包装代码：DIMM
包装说明：,针数：168
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.36风险等级：5.43
访问模式：FOUR BANK PAGE BURST最长访问时间：6 ns
其他特性：AUTO/SELF REFRESHJESD-30 代码：R-XDMA-N168
内存密度：1207959552 bit内存集成电路类型：SYNCHRONOUS DRAM MODULE
内存宽度：72功能数量：1
端口数量：1端子数量：168
字数：16777216 words字数代码：16000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：16MX72
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY认证状态：Not Qualified
自我刷新：YES最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：NO技术：CMOS
温度等级：COMMERCIAL端子形式：NO LEAD
端子位置：DUALBase Number Matches：1

MC-4516DA726PFC-A10 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-4516DA726  
16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE  
REGISTERED TYPE  
Description  
The MC-4516DA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of  
128M SDRAM: µPD45128841 are assembled.  
These modules provide high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
• 16,777,216 words by 72 bits organization (ECC type)  
• Clock frequency and access time from CLK  
Part number  
/CAS latency  
Clock frequency  
(MAX.)  
Access time from CLK  
(MAX.)  
Module type  
MC-4516DA726EFC-A80  
MC-4516DA726EFC-A10  
MC-4516DA726PFC-A80  
MC-4516DA726PFC-A10  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
PC100 Registered DIMM  
Rev. 1.2 Compliant  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
★
★
• Fully Synchronous Dynamic RAM, with all signals referenced • All DQs have 10 Ω ±10 % of series resistor  
to a positive clock edge  
• Single 3.3 V ± 0.3 V power supply  
• LVTTL compatible  
• Pulsed interface  
• Possible to assert random column address in every cycle  
• 4,096 refresh cycles / 64 ms  
• Quad internal banks controlled by BA0 and BA1 (Bank Select) • Burst termination by Burst Stop command and  
• Programmable burst-length (1, 2, 4, 8 and Full Page)  
• Programmable wrap sequence (Sequential / Interleave)  
• Programmable /CAS latency (2, 3)  
Precharge command  
• 168-pin dual in-line memory module  
(Pin pitch = 1.27 mm)  
• Registered type  
• Automatic precharge and controlled precharge  
• CBR (Auto) refresh and self refresh  
• Serial PD  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
1998  
©
Document No. M13203EJ7V0DS00 (7th edition)  
Date Published February 2000 NS CP(K)  
Printed in Japan  
The mark ★ shows major revised points.  
1234567...16

中文翻译

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 		Synchronous DRAM Module, 16MX72, 5.4ns, MOS, 43.18 MM HEIGHT, 1.27 MM PITCH, DIMM-168
MC-4516DA727EFA-A75 ELPIDA

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA727EFA-A75 NEC

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 		16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA727PFA-A75 NEC

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 		16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE

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