5秒后页面跳转
MC-4516DA72F-A80 PDF预览

MC-4516DA72F-A80

更新时间: 2024-11-21 20:05:27
品牌 Logo 应用领域
日电电子 - NEC 动态存储器内存集成电路
页数 文件大小 规格书
16页 147K
描述
Synchronous DRAM Module, 16MX72, 6.5ns, MOS, DIMM-200

MC-4516DA72F-A80 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:,针数:200
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.84
访问模式:FOUR BANK PAGE BURST最长访问时间:6.5 ns
JESD-30 代码:R-XDMA-N200内存密度:1207959552 bit
内存集成电路类型:SYNCHRONOUS DRAM MODULE内存宽度:72
功能数量:1端口数量:1
端子数量:200字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX72封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
认证状态:Not Qualified最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.15 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:MOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

MC-4516DA72F-A80 数据手册

 浏览型号MC-4516DA72F-A80的Datasheet PDF文件第2页浏览型号MC-4516DA72F-A80的Datasheet PDF文件第3页浏览型号MC-4516DA72F-A80的Datasheet PDF文件第4页浏览型号MC-4516DA72F-A80的Datasheet PDF文件第5页浏览型号MC-4516DA72F-A80的Datasheet PDF文件第6页浏览型号MC-4516DA72F-A80的Datasheet PDF文件第7页 
DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-4516DA72  
16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE  
REGISTERED TYPE  
Description  
The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M  
SDRAM : µPD4564441 (Rev. E) are assembled.  
This module provides high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
16,777,216 words by 72 bits organization (ECC type)  
Clock frequency and Clock access time  
Family  
MC-4516DA72-A80  
MC-4516DA72-A10  
MC-4516DA72-A10B  
/CAS Latency  
Clock frequency  
(MAX.)  
Burst cycle time  
(MIN.)  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
100 MHz  
100 MHz  
100 MHz  
77 MHz  
10 ns  
10 ns  
10 ns  
13 ns  
10 ns  
15 ns  
100 MHz  
67 MHz  
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
Pulsed interface  
Possible to assert random column address in every cycle  
Quad internal banks controlled by BA0 and BA1 (Bank Select)  
Programmable burst-length (1, 2, 4, 8 and Full Page)  
Programmable wrap sequence (Sequential / Interleave)  
Programmable /CAS latency (2, 3)  
Automatic precharge and controlled precharge  
CBR (Auto) refresh and self refresh  
Single +3.3 V +0.3 / –0.15 V power supply  
LVTTL compatible  
4,096 refresh cycles/64 ms  
Burst termination by Burst Stop command and Precharge command  
200-pin dual in-line memory module (Pin pitch = 1.27 mm)  
Registered type  
Serial PD  
The information in this document is subject to change without notice.  
The mark shows major revised points.  
Document No. M12353EJ7V0DS00 (7th edition)  
Date Published July 1998 NS CP(K)  
Printed in Japan  
1997  
©

与MC-4516DA72F-A80相关器件

型号 品牌 获取价格 描述 数据表
MC-451AB64S-A12 NEC

获取价格

Synchronous DRAM Module, 1MX64, 9ns, MOS,
MC-451AB64S-A67 NEC

获取价格

Synchronous DRAM Module, 1MX64, 9ns, MOS,
MC4520 TE

获取价格

Open Carrier Double-Balanced Mixer For Microwave Telecommunications
MC4520-2 TE

获取价格

Open Carrier Double-Balanced Mixer For Microwave Telecommunications
MC-452AA724F-A10 NEC

获取价格

Synchronous DRAM Module, 2MX72, 8ns, MOS, DIMM-168
MC-452AA724F-A12 NEC

获取价格

Synchronous DRAM Module, 2MX72, 9ns, MOS, DIMM-168
MC-452AA724F-A67 NEC

获取价格

Synchronous DRAM Module, 2MX72, 9ns, MOS, DIMM-168
MC-452AB645F-A10 RENESAS

获取价格

MEMORY MODULE,SDRAM,2MX64,CMOS,DIMM,168PIN,PLASTIC
MC-452AB645F-A12 RENESAS

获取价格

MEMORY MODULE,SDRAM,2MX64,CMOS,DIMM,168PIN,PLASTIC
MC-452AB645F-A80 RENESAS

获取价格

MEMORY MODULE,SDRAM,2MX64,CMOS,DIMM,168PIN,PLASTIC