Datasheet > MC-4532CC726

MC-4532CC726

更新时间： 2024-11-20 22:28:23

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
16页	153K
描述
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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中文翻译

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MC-4532CC726 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4532CC726

32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

Description

The MC-4532CC726 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of

128M SDRAM: µPD45128841 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 33,554,432 words by 72 bits organization (ECC type)

• Clock frequency and access time from CLK

Clock frequency

(MAX.)

Access time from CLK

(MAX.)

Part number

/CAS latency

MC-4532CC726EF-A80

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

125 MHz

100 MHz

77 MHz

6 ns

7 ns

6 ns

7 ns

MC-4532CC726EF-A10

MC-4532CC726PF-A80

MC-4532CC726PF-A10

125 MHz

100 MHz

77 MHz

★

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length: 1, 2, 4, 8 and full page

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M13680EJ5V0DS00 (5th edition)

Date Published January 2000 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1998

12 3 4 5 6 7...16

中文翻译

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与MC-4532CC726相关器件

型号	品牌	获取价格	描述	数据表
MC-4532CC726EF-A10	ELPIDA	获取价格	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CC726EF-A10	NEC	获取价格	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CC726EF-A80	ELPIDA	获取价格	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CC726EF-A80	NEC	获取价格	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CC726F-A80	RENESAS	获取价格	MEMORY MODULE,SDRAM,32MX72,CMOS,DIMM,168PIN,PLASTIC
MC-4532CC726PF-A10	ELPIDA	获取价格	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CC726PF-A10	NEC	获取价格	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CC726PF-A80	NEC	获取价格	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CC726PF-A80	ELPIDA	获取价格	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CC726XFA	ELPIDA	获取价格	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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