Datasheet > MC-4532CD646

MC-4532CD646

更新时间： 2024-11-21 22:11:35

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
16页	149K
描述
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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中文翻译

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MC-4532CD646 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4532CD646

32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

Description

The MC-4532CD646 is a 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

128M SDRAM: µPD45128841 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 33,554,432 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS latency

Clock frequency

(MAX.)

Access time from CLK

(MAX.)

MC-4532CD646EF-A80

MC-4532CD646EF-A10

MC-4532CD646PF-A80

MC-4532CD646PF-A10

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

125 MHz

100 MHz

77 MHz

6 ns

7 ns

6 ns

7 ns

125 MHz

100 MHz

77 MHz

★

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and full page)

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M13681EJ4V0DS00 (4th edition)

Date Published January 2000 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1998

12 3 4 5 6 7...16

中文翻译

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与MC-4532CD646相关器件

型号	品牌	获取价格	描述	数据表
MC-4532CD646EF-A10	NEC	获取价格	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646EF-A10	ELPIDA	获取价格	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646EF-A80	NEC	获取价格	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646EF-A80	ELPIDA	获取价格	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646PF-A10	ELPIDA	获取价格	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646PF-A10	NEC	获取价格	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646PF-A80	NEC	获取价格	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646PF-A80	ELPIDA	获取价格	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646XF-A10	ELPIDA	获取价格	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646XF-A80	ELPIDA	获取价格	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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