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MC-4532CD646PF-A80 PDF预览

MC-4532CD646PF-A80

更新时间： 2024-11-21 11:11:15
品牌 Logo 应用领域
尔必达 - ELPIDA /
页数 文件大小 规格书
16页 165K
描述
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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MC-4532CD646PF-A80 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-4532CD646  
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE  
UNBUFFERED TYPE  
Description  
The MC-4532CD646EF, MC-4532CD646PF and MC-4532CD646XF are 33,554,432 words by 64 bits synchronous  
dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.  
This module provides high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
• 33,554,432 words by 64 bits organization  
• Clock frequency and access time from CLK  
Part number  
/CAS latency  
Clock frequency  
(MAX.)  
Access time from CLK  
(MAX.)  
MC-4532CD646EF-A80  
MC-4532CD646EF-A10  
MC-4532CD646PF-A80  
MC-4532CD646PF-A10  
MC-4532CD646XF-A80  
MC-4532CD646XF-A10  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
• Pulsed interface  
• Possible to assert random column address in every cycle  
• Quad internal banks controlled by BA0 and BA1 (Bank Select)  
• Programmable burst-length (1, 2, 4, 8 and full page)  
• Programmable wrap sequence (Sequential / Interleave)  
• Programmable /CAS latency (2, 3)  
• Automatic precharge and controlled precharge  
• CBR (Auto) refresh and self refresh  
• All DQs have 10 Ω ±10 % of series resistor  
• Single 3.3 V ± 0.3 V power supply  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for  
availability and additional information.  
Document No. E0055N10 (1st edition)  
This product became EOL in March, 2004.  
(Previous No. M13681EJ5V0DS00)  
Date Published January 2001 CP (K)  
Printed in Japan  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  
1234567...16

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MC-4532CD647XF-A75 ELPIDA

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 		32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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