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MC-4516DA726LFB-A10 PDF预览

MC-4516DA726LFB-A10

更新时间： 2024-10-04 03:33:35
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器内存集成电路
页数 文件大小 规格书
24页 247K
描述
Synchronous DRAM Module, 16MX72, 6ns, MOS, DIMM-168

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MC-4516DA726LFB-A10 数据手册

 浏览型号MC-4516DA726LFB-A10的Datasheet PDF文件第2页浏览型号MC-4516DA726LFB-A10的Datasheet PDF文件第3页浏览型号MC-4516DA726LFB-A10的Datasheet PDF文件第4页浏览型号MC-4516DA726LFB-A10的Datasheet PDF文件第5页浏览型号MC-4516DA726LFB-A10的Datasheet PDF文件第6页浏览型号MC-4516DA726LFB-A10的Datasheet PDF文件第7页 
DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-4516DA726  
16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE  
REGISTERED TYPE  
Description  
The MC-4516DA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of  
64M SDRAM: µPD4564441 are assembled.  
This module provides high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
• 16,777,216 words by 72 bits organization (ECC type)  
• Clock frequency and access time from CLK  
Clock frequency  
(MAX.)  
Access time from CLK  
(MAX.)  
Part number  
/CAS latency  
Module type  
MC-4516DA726F-A80,  
MC-4516DA726LF-A80  
MC-4516DA726F-A10,  
MC-4516DA726LF-A10  
MC-4516DA726LFB-A80  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
PC100 Registered DIMM  
Rev. 1.0 Compliant  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
PC100 Registered DIMM  
Rev. 1.2 Compliant  
★
★
MC-4516DA726LFB-A10  
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
• Pulsed interface  
• Possible to assert random column address in every cycle  
• Quad internal banks controlled by BA0 and BA1 (Bank Select)  
• Programmable burst-length (1, 2, 4, 8 and Full Page)  
• Programmable wrap sequence (Sequential / Interleave)  
• Programmable /CAS latency (2, 3)  
• Automatic precharge and controlled precharge  
• CBR (Auto) refresh and self refresh  
• All DQs have 10 Ω ±10 % of series resistor  
• Single 3.3 V ±0.3 V power supply  
• LVTTL compatible  
• 4,096 refresh cycles/64 ms  
• Burst termination by Burst Stop command and Precharge command  
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)  
• Registered type  
• Serial PD  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
1998  
©
Document No. M13203EJ4V0DS00 (4th edition)  
Date Published April 1999 NS CP(K)  
Printed in Japan  
The mark ★ shows major revised points.  
1234567...24

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 		Synchronous DRAM Module, 16MX72, 6ns, MOS, DIMM-168
MC-4516DA726PFC-A10 ELPIDA

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726PFC-A10 NEC

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726PFC-A80 NEC

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726PFC-A80 ELPIDA

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726XFC-A10 ELPIDA

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726XFC-A80 ELPIDA

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA727 NEC

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 		16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA727 ELPIDA

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 		16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA727-A75 ELPIDA

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 		Synchronous DRAM Module, 16MX72, 5.4ns, MOS, 43.18 MM HEIGHT, 1.27 MM PITCH, DIMM-168

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