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MC-4516DA726EFC-A80

更新时间： 2024-11-17 22:46:23

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
16页	233K
描述
16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4516DA726

16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE

REGISTERED TYPE

Description

The MC-4516DA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of

128M SDRAM: µPD45128841 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 16,777,216 words by 72 bits organization (ECC type)

• Clock frequency and access time from CLK

Part number

/CAS latency

Clock frequency

(MAX.)

Access time from CLK

(MAX.)

Module type

MC-4516DA726EFC-A80

MC-4516DA726EFC-A10

MC-4516DA726PFC-A80

MC-4516DA726PFC-A10

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

125 MHz

100 MHz

77 MHz

6 ns

7 ns

6 ns

7 ns

PC100 Registered DIMM

Rev. 1.2 Compliant

125 MHz

100 MHz

77 MHz

★

• Fully Synchronous Dynamic RAM, with all signals referenced • All DQs have 10 Ω ±10 % of series resistor

to a positive clock edge

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• Pulsed interface

• Possible to assert random column address in every cycle

• 4,096 refresh cycles / 64 ms

• Quad internal banks controlled by BA0 and BA1 (Bank Select) • Burst termination by Burst Stop command and

• Programmable burst-length (1, 2, 4, 8 and Full Page)

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

Precharge command

• 168-pin dual in-line memory module

(Pin pitch = 1.27 mm)

• Registered type

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

1998

Document No. M13203EJ7V0DS00 (7th edition)

Date Published February 2000 NS CP(K)

Printed in Japan

The mark ★ shows major revised points.

12 3 4 5 6 7...16

中文翻译

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与MC-4516DA726EFC-A80相关器件

型号	品牌	获取价格	描述	数据表
MC-4516DA726F-A10	ELPIDA	获取价格	Synchronous DRAM Module, 16MX72, 6ns, MOS, DIMM-168
MC-4516DA726LF-A10	ELPIDA	获取价格	Synchronous DRAM Module, 16MX72, 6ns, MOS, DIMM-168
MC-4516DA726LF-A80	RENESAS	获取价格	MEMORY MODULE,SDRAM,16MX72,CMOS,DIMM,168PIN,PLASTIC
MC-4516DA726LF-A80	ELPIDA	获取价格	Synchronous DRAM Module, 16MX72, 6ns, MOS, DIMM-168
MC-4516DA726LFB-A10	ELPIDA	获取价格	Synchronous DRAM Module, 16MX72, 6ns, MOS, DIMM-168
MC-4516DA726LFB-A80	NEC	获取价格	Synchronous DRAM Module, 16MX72, 6ns, MOS, DIMM-168
MC-4516DA726PFC-A10	ELPIDA	获取价格	16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726PFC-A10	NEC	获取价格	16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726PFC-A80	NEC	获取价格	16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516DA726PFC-A80	ELPIDA	获取价格	16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE

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