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MBR845 PDF预览

MBR845

更新时间: 2024-09-18 12:21:07
品牌 Logo 应用领域
鲁光 - LGE 肖特基二极管功效局域网
页数 文件大小 规格书
2页 234K
描述
Schottky Barrier Rectifiers

MBR845 技术参数

Case Style:TO-220ACIF(A):8.0
Maximum recurrent peak reverse voltage:45Peak forward surge current:150
Maximum instantaneous forward voltage:0.70@IF(A):8.0
Maximum reverse current:0.1TJ(℃):/
class:Diodes

MBR845 数据手册

 浏览型号MBR845的Datasheet PDF文件第2页 
MBR830-MBR8100  
Schottky Barrier Rectifiers  
VOLTAGE RANGE: 30 - 100 V  
CURRENT: 8.0 A  
TO-220AC  
Features  
4.5± 0.2  
10.2± 0.2  
1.4± 0.2  
High surge capacity.  
φ 3.8± 0.15  
For use in low voltage, high frequency inverters, free  
1wheeling, and polarity protection applications.  
11  
Metal silicon junction, majority carrier conduction.  
High current capacity, low forward voltage drop.  
The plastic material carries U/L recognition 94V-0  
PIN  
2
1
2.6± 0.2  
Mechanical Data  
0.9± 0.1  
Case:JEDEC TO-220AC,molded plastic body  
0.5± 0.1  
5.0± 0.1  
Polarity: As marked  
Position: Any  
Dimensions in millimeters  
Weight: 0.064 ounces,1.81 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
ambient temperature unless otherwise specified.  
Ratings at 25  
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.  
MBR MBR MBR MBR MBR MBR MBR MBR  
UNITS  
830  
835  
840 845  
850  
860  
880 8100  
Maximum recurrent peak reverse voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
30  
35  
40  
28  
40  
45  
32  
45  
50  
60  
80  
56  
80  
100  
70  
V
V
V
21  
25  
35  
42  
Maximum DC blocking voltage  
30  
35  
50  
60  
100  
Maximum average forw ard total device11111111  
IF(AV)  
IFSM  
8.0  
A
A
m rectified current @TC = 125°C  
Peak forw ard surge current 8.3ms single half  
150  
b
sine-w ave superimposed on rated load  
)
)
Maximum forw ard  
voltage  
(IF=8.0A,TC=125  
0.57  
0.70  
-
(I  
0.80  
0.95  
0.85  
-
F=8.0A,TC=25  
0.70  
0.84  
V
VF  
(Note 1)  
(IF=16A,TC=25  
)
Maximum reverse current  
at rated DC blocking voltage  
@TC=25  
0.1  
15  
0.5  
50  
IR  
m A  
@TC=125  
Maximum thermal resistance (Note 2)  
Operating junction temperature range  
Storage temperature range  
3.0  
RθJC  
TJ  
K/W  
- 55 ---- + 150  
- 55 ---- + 150  
TSTG  
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.  
2. Thermal resistance f rom junction to case.  
http://www.luguang.cn  
mail:lge@luguang.cn  

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