Datasheet > MBR850

MBR850

更新时间： 2024-09-23 12:46:39

品牌	Logo	应用领域
科盛美 - KERSEMI		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	789K
描述
Guard Ring Die Construction for Transient Protection

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中文翻译

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数据手册

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MBR850 数据手册

MBR830 - MBR860

8.0A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

TO-220AC

Low Power Loss, High Efficiency

High Surge Capability

High Current Capability and Low Forward

Voltage Drop

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Application

Plastic Material: UL Flammability

Classification Rating 94V-0

Dim

Min

14.22

9.65

2.54

5.84

Max

15.88

10.67

3.43

6.86

6.35

12.70

0.51

14.73

1.14

Mechanical Data

3.53Æ 4.09Æ

3.56

1.14

0.30

2.03

4.83

1.40

0.64

2.92

5.33

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Pin 1

Pin 2

Case

Weight: 2.24 grams (approx.)

Mounting Position: Any

Marking: Type Number

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBR

830

MBR

835

MBR

840

MBR

845

MBR

850

MBR

860

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

24.5

31.5

Average Rectified Output Current

(Note 1)

8.0

@ T_C= 125°C

Non-Repetitive Peak Forward Surge Current

I_FSM

I_RRM

V_FM

8.3ms single half sine-wave superimposed on rated load

(JEDEC Method)

150

1.0

Repetitive Peak Reverse Surge Current

@ t £ 2.0ms

Forward Voltage Drop

@ I_F= 8.0A, T_C= 125°C

0.57

0.70

0.84

0.70

0.80

0.95

@ I_F= 8.0A, T_C

@ I_F= 16A, T_C

25°C

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_C

25°C

0.1

I_RM

@ T_C= 125°C

C_j

Typical Junction Capacitance (Note 2)

250

3.0

K/W

V/ms

°C

R_qJC

Typical Thermal Resistance Junction to Case (Note 1)

Voltage Rate of Change (Rated V_R)

dV/dt

T_j,T_STG

1000

Operating and Storage Temperature Range

-65 to +150

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

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