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MBR850 PDF预览

MBR850

更新时间: 2024-09-24 14:52:19
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
2页 368K
描述
Rectifier device Schottky Diode

MBR850 数据手册

 浏览型号MBR850的Datasheet PDF文件第2页 
MBR830 - MBR8100  
SCHOTTKY BARRIER RECTIFIER DIODE  
VOLTAGE RANGE: 30 - 100 V  
CURRENT: 8.0 A  
Features  
High surge capacity.  
!
B
! For use in low voltage, high frequency inverters, free  
TO-220AC  
C
Dim  
A
B
C
D
E
Min  
14.9  
Max  
15.1  
10.5  
2.87  
4.06  
14.22  
0.94  
3.91 Ø  
6.86  
4.70  
2.79  
0.64  
1.40  
5.20  
wheeling, and polarity protection applications.  
G
F
A
Metal silicon junction, majority carrier conduction.  
High currentcapacity,low forwardvoltage drop.  
!
!
2.62  
3.56  
13.46  
0.68  
3.74 Ø  
5.84  
4.44  
2.54  
0.35  
1.14  
4.95  
PIN1  
2
D
Guard ring forovervoltage protection.  
!
F
G
H
I
E
Mechanical Data  
P
!
!
Case:JEDECTO-220AC,molded plasticbody  
Terminals:Leads,solderable perMIL-STD-750,  
J
K
L
I
L
J
P
!
!
!
Method2026  
H
All Dimensions in mm  
Polarity: Asmarked  
Position:Any  
PIN 1 +  
PIN 2 -  
+
Wight:  
!
0.064 ounces,1.81 gram  
Case  
K
TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
MBR MBR MBR MBR MBR MBR MBR MBR  
Symbol  
Unit  
Characteristic  
830  
835  
840 845  
850  
860  
880 8100  
Maximum recurrent peak reverse voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
30  
35  
40  
28  
40  
45  
32  
45  
50  
60  
80  
56  
80  
100  
70  
V
V
V
21  
25  
35  
42  
Maximum DC blocking voltage  
30  
35  
50  
60  
100  
Maximum average forw ard total device11111111  
IF(AV)  
IFSM  
8.0  
A
A
m rectified current @TC = 125°C  
Peak forw ard surge current 8.3ms single half  
150  
b
sine-w ave superimposed on rated load  
)
)
Maximum forw ard  
voltage  
(IF=8.0A,TC=125  
0.57  
0.70  
-
(I  
0.80  
0.95  
0.85  
-
F=8.0A,TC=25  
0.70  
0.84  
V
VF  
(Note 1)  
(IF=16A,TC=25  
)
Maximum reverse current  
at rated DC blocking voltage  
@TC=25  
0.1  
15  
0.5  
50  
IR  
m A  
@TC=125  
Maximum thermal resistance (Note 2)  
Operating junction temperature range  
Storage temperature range  
3.0  
RθJC  
TJ  
K/W  
- 55 ---- + 150  
- 55 ---- + 150  
TSTG  
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.  
2. Thermal resistance f rom junction to case.  
1 of 2  
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