Datasheet > MBR850(TO-220A)

MBR850(TO-220A)

更新时间： 2023-01-02 19:27:18

品牌	Logo	应用领域
JCST		/
页数	文件大小	规格书
2页	216K
描述
Rectifier Diode,

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MBR850(TO-220A) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220A Plastic-Encapsulate Diodes

MBR830, 35, 40, 45, 50, 60

SCHOTTKY BARRIER RECTIFIER

TO-220A

1. CATHODE

2. ANODE

FEATURES

 Schottky Barrier Chip

 Guard Ring Die Construction for Transient Protection

 Low Power Loss,High Efficiency

 High Surge Capability

 High Current Capability and Low Forward Voltage Drop

 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Value

MBR

845

MBR

830

MBR

835

MBR

840

MBR

850

MBR

860

Symbol

Parameter

Unit

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_R

RMS reverse voltage

24.5

31.5

V_R(RMS)

I_O

Average rectified output current@ T_c=125℃

Non-Repetitive peak forward surge current

8.3ms half sine wave

150

I_FSM

Power dissipation

℃/W

℃

P_D

R_ΘJA

T_j

Thermal resistance from junction to ambient

Junction temperature

125

Storage temperature

-55~+150

T_stg

℃

A,Nov,2010

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