Datasheet > MBR40H35CT_08

MBR40H35CT_08

更新时间： 2024-01-29 19:25:20

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	100K
描述
Dual Common-Cathode Schottky Rectifiers

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中文翻译

获取价格

数据手册

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MBR40H35CT_08 数据手册

^{New Pr}M^odB^ucR^t40H35CT thru MBR40H60CT

Vishay General Semiconductor

Dual Common-Cathode Schottky Rectifiers

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Guardring for overvoltage protection

TO-220AB

• Low power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

PIN 1

PIN 3

PIN 2

CASE

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

PRIMARY CHARACTERISTICS

I_F(AV)

20 A x 2

MECHANICAL DATA

Case: TO-220AB

V_RRM

35 V to 60 V

350 A, 320 A

0.55 V, 0.60 V

100 µA

I_FSM

V_Fat I_F= 20 A

I_R

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

T_Jmax.

175 °C

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Mounting Torque: 10 in-lbs maximum

Polarity: As marked

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT

Maximum repetitive peak reverse voltage

V_RRM

Maximum average forward rectified

current (Fig. 1)

total device

per diode

I_F(AV)

Peak forward surge current 8.3 ms

single half sine-wave superimposed on per diode

rated load

I_FSM

350

320

Peak repetitive reverse current per diode

at t_p= 2 µs, 1 kHz

I_RRM

E_RSM

E_AS

1.0

Peak non-repetitive reverse surge

per diode

energy (8/20 µs waveform)

Non-repetitive avalanche energy

per diode

22.5

at 25 °C, I_AS= 3.0 A, L = 5 mH

Voltage rate of change (rated V_R)

dV/dt

10 000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

Document Number: 88920

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4

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与MBR40H35CT_08相关器件

型号	品牌	获取价格	描述	数据表
MBR40H35CT_15	VISHAY	获取价格	Dual Common Cathode Schottky Rectifiers
MBR40H35CT-E3	VISHAY	获取价格	DIODE 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR40H35CT-E35/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, TO-220AB, ROHS CO
MBR40H35PT	VISHAY	获取价格	Dual Schottky Barrier Rectifier
MBR40H35PT-E3/45	VISHAY	获取价格	DIODE 40 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PI
MBR40H45CT	KERSEMI	获取价格	Dual rectifier construction, positive center tap
MBR40H45CT	VISHAY	获取价格	Dual Schottky Barrier Rectifiers
MBR40H45CT/45	VISHAY	获取价格	Rectifier Diode, Schottky, 20A, 45V V(RRM),
MBR40H45CT-E3	VISHAY	获取价格	DIODE 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR40H45CT-E3/45	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifiers

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