Datasheet > MBR40H45CT-E35/45

MBR40H45CT-E35/45

更新时间： 2024-01-03 05:59:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	382K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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MBR40H45CT-E35/45 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.72	Base Number Matches：	1

MBR40H45CT-E35/45 数据手册

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MBR40H35CT thru MBR40H60CT

New Product

Vishay General Semiconductor

Dual Common-Cathode Schottky Rectifiers

High Barrier Technology for improved high temperature performance

FEATURES

• Guardring for overvoltage protection

TO-220AB

• Low power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PIN 1

PIN 3

PIN 2

CASE

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

MAJOR RATINGS AND CHARACTERISTICS

MECHANICAL DATA

Case: TO-220AB

I_F(AV)

20 A x 2

35 V to 60 V

350 A, 320 A

0.55 V, 0.60 V

100 µA

V_RRM

I_FSM

Epoxy meets UL 94V-0 flammability rating

V_Fat I_F= 20 A

I_R

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade

T_jmax

175 °C

Mounting Torque: 10 in-lbs maximum

Polarity: As marked

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT

Maximum repetitive peak reverse voltage

V_RRM

Maximum average forward rectified Total device

I_F(AV)

current (see Fig. 1)

Per leg

Peak forward surge current 8.3 ms

singlehalfsine-wavesuperimposed Per leg

on rated load

I_FSM

350

320

Peak repetitive reverse current per leg

at t_p= 2 µs, 1 kHz

I_RRM

1.0

Peak non-repetitive reverse surge

Per leg

E_RSM

energy (8/20 µs waveform)

Non-repetitive avalanche energy

Per leg

E_AS

22.5

at 25 °C, I_AS= 3.0 A, L = 5 mH

Voltage rate of change (rated V_R)

dv/dt

10000

V/µs

°C

Operating junction and storage temperature range T_J, T_STG

- 65 to + 175

Document Number 88920

27-Mar-06

www.vishay.com

12 3 4

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与MBR40H45CT-E35/45相关器件

型号	品牌	获取价格	描述	数据表
MBR40H45PT	VISHAY	获取价格	Dual Schottky Barrier Rectifier
MBR40H45PT-E3/45	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
MBR40H50CT	KERSEMI	获取价格	Dual rectifier construction, positive center tap
MBR40H50CT	VISHAY	获取价格	Dual Schottky Barrier Rectifiers
MBR40H50CT/45	VISHAY	获取价格	Rectifier Diode, Schottky, 20A, 50V V(RRM),
MBR40H50CT-E35/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 50V V(RRM), Silicon, TO-220AB, ROHS CO
MBR40H50PT	VISHAY	获取价格	Dual Schottky Barrier Rectifier
MBR40H50PT-E3/45	VISHAY	获取价格	DIODE 40 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PI
MBR40H60CT	KERSEMI	获取价格	Dual rectifier construction, positive center tap
MBR40H60CT	VISHAY	获取价格	Dual Schottky Barrier Rectifiers

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