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MBR40H45CT-E35/45 PDF预览

MBR40H45CT-E35/45

更新时间： 2024-11-01 15:40:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 382K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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MBR40H45CT-E35/45 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：R-PSFM-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.72Base Number Matches：1

MBR40H45CT-E35/45 数据手册

 浏览型号MBR40H45CT-E35/45的Datasheet PDF文件第2页浏览型号MBR40H45CT-E35/45的Datasheet PDF文件第3页浏览型号MBR40H45CT-E35/45的Datasheet PDF文件第4页 
MBR40H35CT thru MBR40H60CT  
New Product  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifiers  
High Barrier Technology for improved high temperature performance  
FEATURES  
• Guardring for overvoltage protection  
TO-220AB  
• Low power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
3
2
1
and WEEE 2002/96/EC  
PIN 1  
PIN 3  
PIN 2  
CASE  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
MAJOR RATINGS AND CHARACTERISTICS  
MECHANICAL DATA  
Case: TO-220AB  
IF(AV)  
20 A x 2  
35 V to 60 V  
350 A, 320 A  
0.55 V, 0.60 V  
100 µA  
VRRM  
IFSM  
Epoxy meets UL 94V-0 flammability rating  
VF at IF = 20 A  
IR  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
Tj max  
175 °C  
Mounting Torque: 10 in-lbs maximum  
Polarity: As marked  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
35  
45  
50  
60  
V
Maximum average forward rectified Total device  
40  
20  
IF(AV)  
A
current (see Fig. 1)  
Per leg  
Peak forward surge current 8.3 ms  
singlehalfsine-wavesuperimposed Per leg  
on rated load  
IFSM  
350  
320  
A
Peak repetitive reverse current per leg  
at tp = 2 µs, 1 kHz  
IRRM  
1.0  
20  
A
Peak non-repetitive reverse surge  
Per leg  
ERSM  
mJ  
mJ  
energy (8/20 µs waveform)  
Non-repetitive avalanche energy  
Per leg  
EAS  
22.5  
at 25 °C, IAS = 3.0 A, L = 5 mH  
Voltage rate of change (rated VR)  
dv/dt  
10000  
V/µs  
°C  
Operating junction and storage temperature range TJ, TSTG  
- 65 to + 175  
Document Number 88920  
27-Mar-06  
www.vishay.com  
1
1234

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