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MBR40H45PT

更新时间： 2024-02-19 10:24:46
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
3页 36K
描述
Dual Schottky Barrier Rectifier

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中文翻译

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MBR40H45PT 技术参数

是否Rohs认证：不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.89
Is Samacsys：N二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.55 V最大非重复峰值正向电流：400 A
最高工作温度：175 °C最大输出电流：40 A
最大重复峰值反向电压：45 V子类别：Rectifier Diodes
表面贴装：NO技术：SCHOTTKY
Base Number Matches：1

MBR40H45PT 数据手册

 浏览型号MBR40H45PT的Datasheet PDF文件第2页浏览型号MBR40H45PT的Datasheet PDF文件第3页 
MBR40H35PT thru MBR40H60PT  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Dual Schottky Barrier Rectifier  
Reverse Voltage 35 to 60 V  
Forward Current 40 A  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classifications 94 V-0  
TO-247AD (TO-3P)  
• Dual rectifier construction, positive center-tap  
• Metal silicon junction, majority carrier conduction  
• High surge capability  
0.245 (6.2)  
0.225 (5.7)  
0.645 (16.4)  
0.625 (15.9)  
0.203 (5.16)  
0.078 REF  
(1.98)  
0.193 (4.90)  
0.323 (8.2)  
0.313 (7.9)  
• Low forward voltage drop, low power loss  
and high efficiency  
• For use in low voltage, high frequency inverters,  
free-wheeling, and polarity protection applications  
• Guardring for overvoltage protection  
• Rated for reverse surge and ESD  
10°  
30  
0.170  
(4.3)  
10  
TYP.  
BOTH SIDES  
0.840 (21.3)  
0.820 (20.8)  
0.142 (3.6)  
0.138 (3.5)  
0.086 (2.18)  
0.076 (1.93)  
• 175 °C maximum operation junction temperature  
1
REF.  
BOTH  
SIDES  
2
3
1
Mechanical Data  
Case: JEDEC TO-247AD molded plastic body  
0.118 (3.0)  
0.108 (2.7)  
0.127 (3.22)  
0.117 (2.97)  
0.160 (4.1)  
0.140 (3.5)  
Terminals: Lead solderable per MIL-STD-750, Method 2026  
0.795 (20.2)  
0.775 (19.6)  
PIN 2  
CASE  
PIN 1  
PIN 3  
High temperature soldering guaranteed:  
250°C/10 seconds, 0.17” (4.3 mm) from case  
Polarity: As marked  
0.225 (5.7)  
0.205 (5.2)  
0.030 (0.76)  
0.020 (0.51)  
0.048 (1.22)  
0.044 (1.12)  
Mounting Position: Any Mounting Torque: 10 in-lbs max.  
Weight: 0.2 oz., 5.6 g  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT Unit  
Maximum repetitive peak reverse voltage  
Maximum working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
A
Maximum average forward rectified current (See Fig. 1)  
IF(AV)  
40  
40  
Peak repetitive forward current per leg at TC = 155 °C  
(rated VR, square wave, 20 KHZ)  
IFRM  
EAS  
A
Non-repetitive avalanche energy per leg  
at 25 °C, IAS = 4 A, L = 10 mH  
80  
mJ  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
400  
A
Peak repetitive reverse surge current (1)  
IRRM  
2.0  
30  
1.0  
25  
A
Peak non-repetitive reverse energy (8/20 µs waveform)  
ERSM  
mJ  
Electrostatic discharge capacitor voltage  
Human body model: C = 100 pF, R = 1.5 kΩ  
VC  
25  
kV  
Thermal resistance from junction to case per leg  
Voltage rate of change at (rated VR)  
Operating junction temperature range  
Storage temperature range  
RθJC  
dv/dt  
TJ  
1.2  
°C/W  
V/µs  
°C  
10,000  
–65 to +175  
–65 to +175  
TSTG  
°C  
Document Number 88794  
4-Feb-03  
www.vishay.com  
1
123

中文翻译

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