Datasheet > MBR40H35CT_15

MBR40H35CT_15

更新时间： 2024-01-31 23:21:02

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	85K
描述
Dual Common Cathode Schottky Rectifiers

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中文翻译

获取价格

数据手册

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MBR40H35CT_15 数据手册

MBR40H35CT, MBR40H45CT, MBR40H50CT, MBR40H60CT

www.vishay.com

Vishay General Semiconductor

Dual Common Cathode Schottky Rectifiers

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Power pack

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

TO-220AB

• Low leakage current

• High forward surge capability

• High frequency operation

• Solder dip 275 °C max., 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PIN 1

PIN 3

PIN 2

CASE

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters, or polarity protection application.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

2 x 20 A

Case: TO-220AB

V_RRM

I_FSM

35 V, 45 V, 50 V, 60 V

350 A, 320 A

0.55 V, 0.60 V

100 μA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

V_FatI_F=20A

I_R

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

T_Jmax.

Package

175 °C

TO-220AB

Polarity: As marked

Diode variations

Dual Common Cathode

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT

Maximum repetitive peak reverse voltage

V_RRM

total device

per diode

Maximum average forward rectified

current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

I_FSM

I_RRM

E_RSM

350

320

Peak repetitive reverse surge current per diode 

at t_p= 2 μs, 1 kHz

1.0

Peak non-repetitive reverse surge energy 

(8/20 μs waveform) per diode

Non-repetitive avalanche energy 

at 25 °C, I_AS= 3.0 A, L = 5 mH per diode

E_AS

22.5

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range T_J, T_STG

- 65 to + 175

Revision: 13-Aug-13

Document Number: 88920

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与MBR40H35CT_15相关器件

型号	品牌	获取价格	描述	数据表
MBR40H35CT-E3	VISHAY	获取价格	DIODE 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR40H35CT-E35/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, TO-220AB, ROHS CO
MBR40H35PT	VISHAY	获取价格	Dual Schottky Barrier Rectifier
MBR40H35PT-E3/45	VISHAY	获取价格	DIODE 40 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PI
MBR40H45CT	KERSEMI	获取价格	Dual rectifier construction, positive center tap
MBR40H45CT	VISHAY	获取价格	Dual Schottky Barrier Rectifiers
MBR40H45CT/45	VISHAY	获取价格	Rectifier Diode, Schottky, 20A, 45V V(RRM),
MBR40H45CT-E3	VISHAY	获取价格	DIODE 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR40H45CT-E3/45	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifiers
MBR40H45CT-E35/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, TO-220AB, ROHS CO

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