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MBR200100

更新时间： 2024-09-09 04:16:43

品牌	Logo	应用领域
TRSYS		整流二极管肖特基二极管
页数	文件大小	规格书
2页	121K
描述
SCHOTTKY DIODES MODULE TYPE 200A

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中文翻译

获取价格

技术参数
数据手册

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MBR200100 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.7
Is Samacsys：	N	Base Number Matches：	1

MBR200100 数据手册

Transys

MBR20020(R)

THRU

MBR200100(R)

Electronics

I M I T E D

SCHOTTKY DIODES MODULE TYPE 200A

Features

High Surge Capability

Types Up to 100V V

200Amp Rectifier

20-100 Volts

RRM

HALF PACKAGE

Maximum Ratings

Operating Temperature: -40 C to

+175

Storage Temperature: -40 C to

Maximum

Maximum DC

Blocking

Part Number

Recurrent

Maximum

Peak Reverse RMS Voltage

Voltage

MBR20020( R )

MBR20030( R )

MBR20035( R )

MBR20040( R )

MBR20045( R )

20V

30V

35V

40V

45V

60V

80V

14V

21V

25V

28V

32V

42V

56V

20V

30V

35V

40V

45V

60V

80V

MBR20060( R )

MBR20080( R )

MBR200100( R )

100V

70V

Baseplate

Common Cathode

Baseplate

R=Common Anode

Electrical Characteristics @ 25 Unless Otherwise Specified

Average Forward

I^F(AV)

DIMENSIONS

T_C=136

200A

Current

INCH

Peak Forward Surge

IFSM

3000A

8.3ms

sine

half

DIM

MIN

MAX

MIN

MAX

NOTE

Current

39.62

1.515

.725

.595

1.560

38.48

18.42

0.65V

0.75V

0.84V

(MBR20020~MBR20045)

(MBR20060)

Maximum

Instantaneous

NOTE (1)

19.69

15.88

30.28

19.18

4.061

.775

.625

1.192

.755

V_F

(MBR20080~MBR200100)

15.11

30.02

18.92

3.86

=200 A; T = 25

Forward Voltage

.1.182

.745

Maximum

.152

1/4

.160

Instantaneous

Reverse Current At

Rated DC Blocking

5.0

T_J= 25

I_R

UNC

13.72

3.96

- 2B

14.73

4.06

125

T_J=

250

.540

.156

.580

.160

.505

.130

NOTE (1)

Voltage

12.57

3.05

12.83

3.30

.495

.120

Maximum Thermal

Resistance Junction

To Case

R j c

0.8

NOTE :

(1)

usec,

Pulse Test: Pulse Width 300

Duty Cycle

中文翻译

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